[20a-233-1~9] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

▼ [20a-233-3] Change of Raman Scattering as a Function of Laser Power in Si-Films Crystallized by CLC

〇(M2)Muhammad Arif Razali、Nobuo Sasaki^2,1、Yasuaki Ishikawa¹、Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology、2.Sasaki Consulting)

キーワード：laser annealing, CLC, polycrystalline silicon

Crystallized poly-Si by continuous wave laser were done and the grain orientation were observed by EBSD for different laser power. Raman spectroscopy then carried out at different grain texture to study the stress in different grain texture and orientation.