[21p-135-1~16] 13.1 Si系基礎物性・表面界面・シミュレーション

▲ [21p-135-11] Lateral etching of HfN_0.5 narrow line utilizing diluted HF solution

〇(M1)Yizhe Ding¹、Rengie Mark D Mailig¹、Sohya Kudoh¹、Shun-ichiro Ohmi¹ (1.Tokyo Tech)

キーワード：wet etching, narrow line

The so-called high-κ gate dielectrics are regarded as the most promising candidates to overcome the limitations of transistor scaling, such as equivalent-oxide-thickness (EOT) and gate length (L_g) scaling. We have reported that 0.5 nm EOT utilizing bilayer HfN_x gate insulators with in-situ formed HfN_0.5 gate electrode. In this paper, the lateral etching of HfN_0.5 gate electrode utilizing diluted HF (DHF) solution was investigated. The lateral etching rate of 1.1 µm/min was confirmed by 4 µm L/S pattern. Moreover, the precise control of lateral etching for HfN_0.5 gate electrode was realized which would be suitable for narrow gate formation.