[21p-135-1~16] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

▼ [21p-135-8] Effect of Conduction Band Offset on Breakdown Voltage at SiO₂/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy

〇(D)Efi Dwi Indari^1,2, Yoshiyuki Yamashita^1,2, Takahiro Nagata¹, Shigenori Ueda^1,3, Ryu Hasunuma⁴, Kikuo Yamabe⁴ (1.NIMS, 2.Kyushu Univ, 3.SPring-8, 4.Univ of Tsukuba)

Keywords:breakdown voltage, conduction band offset, SiO2/4H-SiC (000-1)

We investigated the effect of conduction band offset (ΔE_c) on the breakdown voltage upon SiO₂/4H-SiC (000-structures by means of hard x-ray photoelectron spectroscopy. For electrical measurement of metal/SiO₂/4H-SiC (000-1) structures, the breakdown voltage increases with larger ΔE_c. SiO₂ prepared by dry oxidation procedure exhibits largest ΔE_c, while wet oxidation procedure exhibits smallest ΔE_c. Oxygen annealing performed after wet oxidation was effective for an increase of ΔE_c, yields higher breakdown voltage. Consequently, larger ΔE_c results in lower leakage current.