1:30 PM - 3:30 PM

[19p-P5-1] High-rate sputter deposition of WO₃ films by using a Facing Target type sputtering system

〇Yoji Yasuda¹, Yoichi Hoshi¹ (1.Tokyo Polytechnic Univ.)

1:30 PM - 3:30 PM

▲ [19p-P5-2] Epitaxial growth of highly strained RuO₂ thin film by self-buffering method

〇(M2)Zainab Fatima¹, Daichi Oka¹, Tomoteru Fukumura^1,2,3 (1.Tohoku Univ., 2.WPI-AIMR, 3.CSRN)

1:30 PM - 3:30 PM

[19p-P5-3] Metal-insulator transition in layered oxide La₂O₂Bi with Bi square net

〇Kota Matsumoto¹, Hideyuki Kawasoko¹, Tomoteru Fukumura^1,2,3 (1.Tohoku Univ., 2.WPI-AIMR,Tohoku Univ., 3.CSRN,Tohoku Univ.)

1:30 PM - 3:30 PM

[19p-P5-4] Probe load dependence of sefl-oscillation properties of VO₂ films on conductive TiN layers

〇Ryuta Tobe¹, Tomohiro Aoto¹, Yosuke Kitagawa¹, Keisuke Mamiya¹, Kunio Okimura¹ (1.Tokai Univ.)

1:30 PM - 3:30 PM

[19p-P5-5] Oriented-growth of phase transitionVO₂films and the effect of grain boundary diffusions by introduction of (111)-oriented TiN substrates

〇Tomohiro Aoto¹, Kunio Okimura¹ (1.Tokai Univ.)

1:30 PM - 3:30 PM

[19p-P5-6] Observation of Metal-insulator Transition of VO₂ Thin Film Deposited on YSZ Substrate

Takumi Minohara¹, Tomohiro Tannno¹, Makoto Minohara², Koji Horiba², Hioshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.PF, KEK)

1:30 PM - 3:30 PM

[19p-P5-7] Optical properties of VO₂ films on ZnO/glass with reduced transition temperature by rf substrate bias sputtering

〇Hiroaki Hoshino¹, Tatsuro Fukuzumi¹, Kenta Sato¹, Kunio Okimura¹, Iwao Yamaguchi², Tetsuo Tsuchiya² (1.Tokai Univ., 2.AIST)

1:30 PM - 3:30 PM

[19p-P5-8] Strain Effect and Electrical Property of Nd_0.6Sr_0.4FeO_3-_δ Thin Film

〇(M2)Wataru Namiki¹, Makoto Takayanagi^1,2, Takashi Tsuchiya², Makoto Minohara³, Koji Horiba³, Hiroshi Kumigashira³, Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.NIMS, 3.KEK)

1:30 PM - 3:30 PM

[19p-P5-9] Impact of hole-doping on metal-insulator transition in β-pyrochlore-type CsW₂O₆

〇Takuto Soma¹, Kohei Yoshimatsu¹, Koji Horiba^2,3, Hiroshi Kumigashira^2,3, Akira Ohtomo^1,3 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.KEK-PF, 3.MCES)

1:30 PM - 3:30 PM

△ [19p-P5-10] Transport Properties of Ca₂RuO₄ Thin Films Grown by Solid-Phase Epitaxy in Atmospheric Pressure

〇(M1)Shota Yasuta¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Graduate School of IST, Hokkaido Univ.)

1:30 PM - 3:30 PM

[19p-P5-11] Magnetic Anisotropy of La_0.67Sr_0.33MnO₃(100) Thin Film by Planar-Hall-Effect

〇(D)Kinya Kawamura^1,2, Takashi Tsuchiya², Makoto Minohara³, Koji Horiba³, Hiroshi Kumigashira³, Kazuya Terabe², Tohru Higuchi¹ (1.Tokyo Univ. of Sci, 2.NIMS, 3.KEK)

1:30 PM - 3:30 PM

[19p-P5-12] Evaluation of Resistive Switching Memory Device using Wet Process

〇(B)Taisuke Saigo¹, Masataka Higashi¹, Takahiko Ban¹, Shinichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[19p-P5-13] Application to Resistive Memory and Fabrication of Ta2O5 Thin Film by Wet Process

〇Masataka Higashi¹, Taisuke Saigo¹, Takahiko Ban¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[19p-P5-14] Observation of Transmission Route of a Molecular-Gap Atomic Switch

〇(B)Nozomi Mishima¹, Tsuyoshi Hasegawa¹ (1.Waseda Univ.)

1:30 PM - 3:30 PM

[19p-P5-15] Analysis of resistive switching mechanism in polycrystalline HfO₂by using first-prinsiples calculation

〇(M1C)Sohta Hida¹, Takahiro Yamasaki², Jun Nara², Takahisa Ohno², Satoru Kishida^1,3, Kentaro Kinoshita⁴ (1.Tottori Univ., 2.NIMS, 3.TiFREC, 4.Tokyo Univ. of Science)

1:30 PM - 3:30 PM

[19p-P5-16] Development of a Three-Terminal Atomic Switch in a Vertical Structure

〇Masato Araki¹, Tsuyoshi Hasegawa¹ (1.Waseda Univ.)

1:30 PM - 3:30 PM

[19p-P5-17] Research on Reservoir Computing Using Ag₂S Islands Network

〇Keita Ojima¹, Yasuhisa Naitoh², Tsuyoshi Hasegawa¹ (1.Waseda Univ., 2.Sansou Inst.)

1:30 PM - 3:30 PM

[19p-P5-18] Distribution of Switching-on Time of a Molecular-gap Atomic Switch

〇Chisato Arima¹, Tsuyoshi Hasegawa¹ (1.Waseda Univ.)

1:30 PM - 3:30 PM

[19p-P5-19] Fabrication of Pt-Pd/(Y₂O₃-doped ZrO₂ single crystal thin film)/Pt-Pd structure with MEMS technology and its resistive switching properties

〇Koshi Futatsumori¹, Tadashi Shiota¹, Kunio Nishioka², Akihiro Matsutani², Masaru Tada³, Akio Nishiyama¹, Kazuo Shinozaki¹ (1.Tokyo tech, 2.micro,Tokyo tech, 3.Analysis,Tokyo tech)

1:30 PM - 3:30 PM

[19p-P5-20] Fabrication of near-infrared transparent conductive IWO thin film using pressure gradient type plasma gun

〇Yusuke Kondo¹, Noriaki Hashimoto², Eiji Furuya², Yoshiharu Kakehi¹, Takashi Mori¹, Yoshiharu Yamada¹, Takeshi Tanaka¹ (1.ORIST, 2.Chugairo Co., Ltd.)

1:30 PM - 3:30 PM

[19p-P5-21] Resistance reduction of self-standing FTO nanofiber membrane

〇Akimasa Ichigi¹, Muhammad Zobayer BinMukhlish¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima Univ.)

1:30 PM - 3:30 PM

[19p-P5-22] Epitaxial synthesis and dielectric property measurement on ε-Ga₂O₃

〇Subaru Yusa¹, Daichi Oka¹, Tomoteru Fukumura^1,2,3 (1.Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.CSRN, Tohoku Univ.)

1:30 PM - 3:30 PM

▲ [19p-P5-23] Ionization potentials and electron affinities of amorphous Cd-In-Ga-O

〇(D)Minseok Kim¹, Hiroshi Yanagi¹ (1.University of Yamanashi)

1:30 PM - 3:30 PM

[19p-P5-24] Improvement of crystallinity of FTO / ZnO using multi buffer layers

〇(M1)Akihiro Mori¹, Zinwei Zhao¹, Guan Sujun¹ (1.Tokyo Univ. of Sci)

1:30 PM - 3:30 PM

[19p-P5-25] The growth of ASnO₃(A=Sr,Ba) films by sputtering and the electrical properties

〇Iduru Kanagawa¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

1:30 PM - 3:30 PM

[19p-P5-26] Properties of impurity-doped AlO_x thin films prepared by sol-gel method

〇Yuuki Nanya¹, Koji Abe¹ (1.Nitech)

1:30 PM - 3:30 PM

[19p-P5-27] Characterization of BiVO₄ powders by precipition method

〇(B)Yusuke Ohata¹, Toshiya Banba¹, Mikihiko Nishitani², Takahiko Ban¹, Shinichi Yamamoto¹ (1.Ryukoku Univ., 2.Osaka Univ.)

1:30 PM - 3:30 PM

[19p-P5-28] Photorechargeable properties of TiO₂/WO₃/ITO triple-layer coaxial nanofibers

〇Takuya Matsuda¹, Iesuke Yorita¹, Taito Kumamoto¹, Taichi Komaki¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima Univ.)

1:30 PM - 3:30 PM

[19p-P5-29] Resistivity of Cu₂O thin films prepared by electrochemical deposition \\in various pH solution

〇Tetsuya Ageno¹, Takeru Saisho¹, Daiki Maeda¹, Teruaki Nomiyama¹, Yuji Horie¹, Akira Kokeguchi² (1.Kagoshima univ., 2.Takata Corp.)

1:30 PM - 3:30 PM

△ [19p-P5-30] Enhanced photoelectrochemical activity of a La,Rh co-doped SrTiO3 photocathode

〇Yoshihisa Hosokawa¹, Ryota Takahashi^1,2, Hiroshi Kumigashira³, Mikk Lippmaa¹ (1.Univ. of Tokyo, ISSP, 2.JST PRESTO, 3.PF,KEK)

1:30 PM - 3:30 PM

[19p-P5-31] Electrochemical growth of Cu₂O films under Cu supply-limiting conditions

〇Shuhei Shiomoto¹, Atsushi Ashida¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

1:30 PM - 3:30 PM

▲ [19p-P5-32] Fabrication of Perovskite Solar Cell with Thickness-defendant TiO₂ Photoelectrode

〇(PC)MD Faruk Hossain¹, Shigeki Naka¹, Hiroyuki Okada¹ (1.University of Toyama)

1:30 PM - 3:30 PM

[19p-P5-33] Capacitance Device of Amorphous WO_3-x by Redox Reaction

Takahiro Sakai¹, Ten Sugimoto¹, Hiroshi Hayashi¹, Makoto Minohara², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.PF, KEK)

1:30 PM - 3:30 PM

[19p-P5-34] Surface Ionic Conduction of Sm-doped CeO_2-_d Thin Film at intermediate temperature region

Daiki Nishioka¹, Wataru Namiki¹, Makoto Minohara², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.PF, KEK)

1:30 PM - 3:30 PM

[19p-P5-35] Monolithic three-dimensional battery fabricated by electrochemical deposition of conducting polymer polyaniline onto inner surfaces of a mesoporous TiO₂

〇Kyohei Akiyoshi¹, Ryoichi Arima¹, Teruaki Nomiyama¹, Yuji Horie¹, Akira Kokeguchi² (1.Kagoshima Univ, 2.Takata Corporation)

1:30 PM - 3:30 PM

[19p-P5-36] Demonstration of operation of IGZO transistor with solid-state-electric double layer as a gate

〇(M1)Yoshitaka Watanabe¹, Asano Tetsuya¹, Fujii Mami¹, Juan Paolo Bermundo¹, Ishikawa Yasuaki¹, Uraoka Yukiharu¹, Adachi Hedeaki¹ (1.NAIST)

1:30 PM - 3:30 PM

△ [19p-P5-37] Development of a thin-film deposition system utilizing Bayesian optimization

〇(M1)Shigeru Kobayashi¹, Ryota Shimizu^1,2, Yasunobu Ando³, Kazunori Nishio¹, Taro Hitosugi¹ (1.Tokyo Tech, 2.JST-PRESTO, 3.AIST)

1:30 PM - 3:30 PM

△ [19p-P5-38] Fabrication of NaCrO₂ epitaxial thin films using pulsed laser deposition

〇(M1)Hiroaki Asoma¹, Ryota Shimizu^1,2, Kazunori Nishio¹, Taro Hitosugi¹ (1.Tokyo Tech., 2.JST-PRESTO)

1:30 PM - 3:30 PM

[19p-P5-39] Mechanism of Dipole Layer Formation at high-k/high-k interface by Molecular Dynamics Simulation

〇Shota Kanemaru¹, Nobuhiro Nakagawa¹, Okuto Takahashi¹, Takanobu Watanabe¹ (1.Waseda Univ.)

Session information

[19p-P5-1~39] 6.3 Oxide electronics

▲ [19p-P5-2] Epitaxial growth of highly strained RuO2 thin film by self-buffering method

△ [19p-P5-10] Transport Properties of Ca2RuO4 Thin Films Grown by Solid-Phase Epitaxy in Atmospheric Pressure

▲ [19p-P5-23] Ionization potentials and electron affinities of amorphous Cd-In-Ga-O

△ [19p-P5-30] Enhanced photoelectrochemical activity of a La,Rh co-doped SrTiO3 photocathode

▲ [19p-P5-32] Fabrication of Perovskite Solar Cell with Thickness-defendant TiO2 Photoelectrode

△ [19p-P5-37] Development of a thin-film deposition system utilizing Bayesian optimization

△ [19p-P5-38] Fabrication of NaCrO2 epitaxial thin films using pulsed laser deposition

Authentication

▲ [19p-P5-2] Epitaxial growth of highly strained RuO₂ thin film by self-buffering method

△ [19p-P5-10] Transport Properties of Ca₂RuO₄ Thin Films Grown by Solid-Phase Epitaxy in Atmospheric Pressure

▲ [19p-P5-32] Fabrication of Perovskite Solar Cell with Thickness-defendant TiO₂ Photoelectrode

△ [19p-P5-38] Fabrication of NaCrO₂ epitaxial thin films using pulsed laser deposition