[17p-C101-1~6] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[17p-C101-6] Crystallinity Improvement in B-Doped Si and Its Influence upon Si-Ge p⁺-n Junctions Formed by ECR Ar Plasma CVD

〇(DC)Wu Li¹, Naofumi Ueno¹, Nagafumi Kato¹, Masao Sakuraba¹, Hisanao Akima¹, Shigeo Sato¹ (1.Tohoku Univ.)

Keywords:Electron-Cyclotron-Resonance Plasma Chemical Vapor Deposition, Heterostructure, Epitaxially Grow

In order to suppress thermal mixing, we fabricated p⁺-n junctions with a Si/Si-Ge alloy heterostructure epitaxially grown by using low-energy ECR Ar plasma enhanced CVD without substrate heating, and we investigated influence of improved crystallinity of high-concentration B-doped Si in the p⁺-n junction formation. It was confirmed that current tended to increase exponentially with voltage and the slope is almost ideal in the forward bias condition, and it was effectively suppressed in the reverse bias condition. This indicates that the improved crystallinity results in better rectifying characteristics for this p⁺-n junction.