[19a-C302-1~12] 13.7 Compound and power electron devices and process technology

[19a-C302-5] Analyses for slow decay components in TR-PL signals from GaN homoepitaxial layers

〇Masashi Kato^1,3, Takato Asada¹, Kenji Ito², Kazuyoshi Tomita², Tetsuo Narita², Tetsu Kachi³ (1.NITech, 2.Toyota Central R&D Labs., 3.Nagoya Univ.)

Keywords:GaN, Time-resolved photoluminescence, deep level

GaN homoepitaxial layers are expected to be used as a drift layer of a power device, and its quality evaluation is important. We have evaluated n-type GaN homoepitaxial layers by time-resolved photoluminescence (TR-PL) and microwave photoconductivity decay methods. In this presentation, we report the results of numerical analysis using equations for capture and emission of deep levels with respect to slow decay components of TR-PL signals.