[20a-C101-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[20a-C101-3] Cu diffusion barrier properties of Cluster-preforming-deposited WSi_n (n = 12) insertion film

〇Naoya Okada¹, Noriyuki Uchida¹, Shinichi Ogawa¹, Toshihiko Kanayama¹ (1.AIST)

Keywords:Silicide, Contact, diffusion barrier film

The insertion of WSi₁₂ films extends a TDDB lifetime > 10 years at 100ºC under 5 MV/cm stress for Cu MOS capacitors, thus enabling the direct Cu contact at S/D in advanced CMOS.