10:30 AM - 10:45 AM
[20a-C101-6] First-principles study on Schottky barrier at TiN/Ge interfacesⅡ -Effects of disorder-
Keywords:germanium, Ge, Schottky barrier, titanium nitride, TiN
Oral presentation
13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology
Tue. Mar 20, 2018 9:15 AM - 12:15 PM C101 (52-101)
Masato Sone(Titech)
10:30 AM - 10:45 AM
Keywords:germanium, Ge, Schottky barrier, titanium nitride, TiN