Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[18a-E304-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Wed. Sep 18, 2019 9:30 AM - 11:45 AM E304 (E304)

Seiichiro Higashi(Hiroshima Univ.), Tatsuya Okada(Univ. of the Ryukyus)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[18a-E304-1] Effect of a-Si Film Thickness on the (100) texture in the CW Laser Crystallizaion on Glass Substrate

〇Nobuo Sasaki^1,2,3, Arif Muhammad², Yukiharu Uraoka², Jun Gotoh³, Shigeto Sugimoto³ (1.Sasaki Consulting, 2.NAIST, 3.V-technology)

9:45 AM - 10:00 AM

△ [18a-E304-2] Characterization of Low-temperature Poly-Si Thin-film Transistors Fabricated by Grain-Growth Controlled Selective-Laser-Annealing

〇Kaname Imokawa^1,2, Huminobu Hamano¹, Daisuke Nakamura¹, Kaori Saito³, Jun Gotoh³, Tetsuya Goto⁴, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton, Kyushu Univ., 3.V-Technology, 4.Tohoku Univ.)

10:00 AM - 10:15 AM

△ [18a-E304-3] Surface Flattening of LTPS Thin Films by Laser Annealing and Electrical Properties of the LTPS-TFTs

〇(M1)Fuminobu Hamano¹, Kaname Imokawa^1,2, Daisuke Nakamura¹, Tetsuya Goto³, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton, Kyushu Univ., 3.Tohoku Univ.)

10:15 AM - 10:30 AM

[18a-E304-4] Performance of Four-Terminal Low-Temperature Poly-Si TFT with High-k Gate Stack on Glass Substrate

〇Naoki Nishiguchi¹, Akito Hara¹ (1.Tohoku Gakuin Univ)

10:30 AM - 10:45 AM

[18a-E304-5] In-situ Monitoring for Visualization of Temperature Distribution in Molten Region on a-Si film during Atmospheric Pressure Thermal Plasma Jet Irradiation

〇Yuri Mizukawa¹, Asaki Kameda¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

10:45 AM - 11:00 AM

[18a-E304-6] Investigation on Characteristic Variation of Thin-Film Transistor Fabricated on Crystalline Silicon Stripe by µCLBS Method

〇WENCHANG YEH¹, Mitsuki Hirasue¹, Toshiaki Tsuchiya¹ (1.Shimane Univ.)

11:00 AM - 11:15 AM

[18a-E304-7] Issues for the Crystallization of a-Si Films and TFTs on Panel

〇Takashi Noguchi¹, Tatsuya Okada¹ (1.Univ. Ryukyus)

11:15 AM - 11:30 AM

△ [18a-E304-8] Solid-Phase Crystallization of As-doped Amorphous Ge on Glass Leading to High Electron Mobility

〇Masaya Saito¹, Kenta Moto¹, Takeshi Nishida¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

11:30 AM - 11:45 AM

△ [18a-E304-9] [Highlight] Direct synthesis of high hole mobility (670 cm²/Vs) Ge thin film on a plastic substrate

〇Toshifumi Imajo^1,2, Kenta Moto^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

Session information

[18a-E304-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[18a-E304-1] Effect of a-Si Film Thickness on the (100) texture in the CW Laser Crystallizaion on Glass Substrate

△ [18a-E304-2] Characterization of Low-temperature Poly-Si Thin-film Transistors Fabricated by Grain-Growth Controlled Selective-Laser-Annealing

△ [18a-E304-3] Surface Flattening of LTPS Thin Films by Laser Annealing and Electrical Properties of the LTPS-TFTs

[18a-E304-4] Performance of Four-Terminal Low-Temperature Poly-Si TFT with High-k Gate Stack on Glass Substrate

[18a-E304-5] In-situ Monitoring for Visualization of Temperature Distribution in Molten Region on a-Si film during Atmospheric Pressure Thermal Plasma Jet Irradiation

[18a-E304-6] Investigation on Characteristic Variation of Thin-Film Transistor Fabricated on Crystalline Silicon Stripe by µCLBS Method

[18a-E304-7] Issues for the Crystallization of a-Si Films and TFTs on Panel

△ [18a-E304-8] Solid-Phase Crystallization of As-doped Amorphous Ge on Glass Leading to High Electron Mobility

△ [18a-E304-9] [Highlight] Direct synthesis of high hole mobility (670 cm²/Vs) Ge thin film on a plastic substrate

Authentication

Session information

[18a-E304-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[18a-E304-1] Effect of a-Si Film Thickness on the (100) texture in the CW Laser Crystallizaion on Glass Substrate

△ [18a-E304-2] Characterization of Low-temperature Poly-Si Thin-film Transistors Fabricated by Grain-Growth Controlled Selective-Laser-Annealing

△ [18a-E304-3] Surface Flattening of LTPS Thin Films by Laser Annealing and Electrical Properties of the LTPS-TFTs

[18a-E304-4] Performance of Four-Terminal Low-Temperature Poly-Si TFT with High-k Gate Stack on Glass Substrate

[18a-E304-5] In-situ Monitoring for Visualization of Temperature Distribution in Molten Region on a-Si film during Atmospheric Pressure Thermal Plasma Jet Irradiation

[18a-E304-6] Investigation on Characteristic Variation of Thin-Film Transistor Fabricated on Crystalline Silicon Stripe by µCLBS Method

[18a-E304-7] Issues for the Crystallization of a-Si Films and TFTs on Panel

△ [18a-E304-8] Solid-Phase Crystallization of As-doped Amorphous Ge on Glass Leading to High Electron Mobility

△ [18a-E304-9] [Highlight] Direct synthesis of high hole mobility (670 cm2/Vs) Ge thin film on a plastic substrate

Authentication

△ [18a-E304-9] [Highlight] Direct synthesis of high hole mobility (670 cm²/Vs) Ge thin film on a plastic substrate