Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[18p-E304-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Wed. Sep 18, 2019 1:45 PM - 4:15 PM E304 (E304)

Hiroshi Ikenoue(Kyushu Univ.), Hitoshi Habuka(Yokohama Natl. Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [18p-E304-1] Doping of Aluminum to Poly-Si Thin Films Coated with Alumina Sol Solution by KrF Excimer Laser Irradiation

〇(B)Takayuki Kurashige¹, Kaname Imokawa^1,2, Akira Suwa¹, Daisuke Nakamura¹, Tetsuya Goto³, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton, Kyushu Univ., 3.Tohoku Univ.)

2:00 PM - 2:15 PM

[18p-E304-2] Reduction of boron diffusion by fluorine in pre-amorphized Si

〇Ryotaro Kiga¹, Masashi Uematsu¹, Kohei Itoh¹ (1.Keio Univ.)

2:15 PM - 2:30 PM

[18p-E304-3] Diffusion control of n-type dopants in Ge with high activation using co-implantation and flash lamp annealing

〇Hideaki Tanimura¹, Hikaru Kawarazaki¹, Takayuki Aoyama¹, Shinichi Kato¹, Yoshihide Nozaki¹, Ryota Wada², Takahiro Higuchi², Tsutomu Nagayama², Takashi Kuroi² (1.SCREEN Semiconductor Solutions, 2.NISSIN ION EQUIPMENT)

2:30 PM - 2:45 PM

[18p-E304-4] Chemical reaction of boron trichloride gas at silicon surface

〇Mitsuko Muroi¹, Ayami Yamada¹, Ayumi Saito¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

2:45 PM - 3:00 PM

[18p-E304-5] Electric current for SiC_xN_yO_zthin film formation rate by room temperature PECVD

Toru Watanabe¹, 〇Kenta Hori¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

3:00 PM - 3:15 PM

[18p-E304-6] Silicon epitaxial growth using dichlorosilane for minimal CVD reactor

〇Mana Otani¹, Toshinori Takahashi¹, Mitsuko Muroi¹, Hitoshi Habuka¹, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama Nat. Univ., 2.MINIMAL, 3.AIST)

3:15 PM - 3:30 PM

△ [18p-E304-7] Stress Evaluation of Wiggling SiN Pattern by using Raman Spectroscopy

〇(M1)Masato Koharada¹, Ryo Yokogawa^1,2, Naomi Sawamoto¹, Kazutoshi Yoshioka¹, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC)

3:30 PM - 3:45 PM

[18p-E304-8] Silicon filling in nano space using liquid silicon

〇TAKASHI MASUDA¹, Yuki Usui², Takahiro Kishioka² (1.JAIST, 2.Nissan Chemical Co.)

3:45 PM - 4:00 PM

[18p-E304-9] SiC Quantum-Dot Formation in Oxide Film using Hot Double Si⁺/C⁺ Ion Implantation

〇Rikito Kanazawa¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (1.Kanagawa.Univ, 2.Tokyo.Univ)

4:00 PM - 4:15 PM

[18p-E304-10] Low Schottky barrier height and high thermal stability of Co/n-Si junctions inserting WSi_n

〇Naoya Okada¹, Noriyuki Uchida¹, Shinichi Ogawa¹, Toshihiko Kanayama¹ (1.AIST)

Session information