Session information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[19p-E308-1~13] 17.3 Layered materials

Thu. Sep 19, 2019 1:15 PM - 4:45 PM E308 (E308)

Masaki Tanemura(Nagoya Inst. of Tech.), Takayuki Arie(Osaka Pref. Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

▼ [19p-E308-1] Large-Area 2D Heterostructures of Perovskite amd WS₂

〇(D)Ufuk Erkilic¹, Hyungoo Ji¹, Pablo Solis-Fernandez¹, Keisuke Shinokita², Yung-Chang Lin³, Kazu Suenaga³, Susumu Okada⁴, Kazunari Matsuda², Hiroki Ago¹ (1.Kyushu Univ., 2.Kyoto Univ., 3.AIST, 4.Univ. Tsukuba)

1:30 PM - 1:45 PM

▲ [19p-E308-2] Chemical Vapor Deposition of 2D Transition Metal Dichalcogenides – Just Add Salts

〇(PC)Shisheng Li¹ (1.National Institute for Materials Science)

1:45 PM - 2:00 PM

[19p-E308-3] Fabrication of hafnium diselenide thin film by using metal source

〇Takuma Ozawa¹, Yu Abe¹, Noriyuki Urakami^1,2, Yoshio Hashimoto^1,2 (1.Shinshu Univ., 2.Research Initiative for supra-Materials)

2:00 PM - 2:15 PM

[19p-E308-4] Influence of sulfur precursors on tin sulfide (SnS_x) thin films fabricated by mist CVD

〇(DC)Shota Sato¹, Li Liu^1,2,3, Giang T. Dang^1,2,3, Toshiyuki Kawaharamura^1,2,3 (1.Graduate school of Eng. Course, Kochi Univ. of Technol., 2.Sys. Eng., 3.Res. Inst.)

2:15 PM - 2:30 PM

△ [19p-E308-5] The Structural Difference of MoS_2(1-x)Te_2x Fabricated by Co-Sputtering
for Different Deposition Conditions

〇Yusuke Hibino^1,4, Yusuke Hashimoto¹, Kota Yamazaki¹, Yuya Oyanagi¹, Naomi Sawamoto¹, Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudoh³, Hitoshi Wakabayashi², Atsushi Ogura¹ (1.Meiji Univ., 2.Tokyo Tech., 3.Gas Phase Growth Ltd., 4.JSPS Research Fellow DC1)

2:30 PM - 2:45 PM

△ [19p-E308-6] High-Hall effect mobility of layered ZrS₂ film using sputtering and sulfur vapor annealing

〇(D)Masaya Hamada¹, Kentaro Matsuura¹, Iriya Muneta¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Tsutsui Kazuo¹, Hitoshi Wakabayashi¹ (1.Tokyo tech.)

2:45 PM - 3:00 PM

[19p-E308-7] Importance of Improving Sputtered-MoS₂Film Quality in Sulfurization Process

〇Shinya Imai¹, Masaya Hamada¹, Satoshi Igarashi¹, Iriya Muneta¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech)

3:00 PM - 3:15 PM

△ [19p-E308-8] Direct Observation of Physical Parameters for the Growth of Monolayer WS₂ by In-situ Monitoring

〇Tomoya Kameyama¹, Chao Li¹, Toshiro Kaneko¹, Toshiaki Kato^1,2 (1.Tohoku Univ., 2.JST-PRESTO)

3:15 PM - 3:30 PM

[19p-E308-9] Fabrication of solution processed WS₂ thin film

〇Kenichi Haga¹, Takahiro Nakajima¹, Yuki Kobayashi¹, Eisuke Tokumitsu¹ (1.JAIST)

3:30 PM - 3:45 PM

[19p-E308-10] Effect of the off-cut direction of Si (111) vicinal substrate on 2D-In₂Se₃ growth

〇Kei Kawakatsu¹, Yu-Cian Wang¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Masashi Yamaguchi¹ (1.ToyotaTech. Inst.)

4:00 PM - 4:15 PM

[19p-E308-11] Insulating properties of few-layer h-BN films synthesized by sputtering method

〇Daiyu Kondo^1,2, Kenjiro Hayashi^1,2, Masako Kataoka¹, Shintaro Sato^1,2 (1.Fujitsu Labs., 2.Fujitsu)

4:15 PM - 4:30 PM

[19p-E308-12] Bilayer graphene CVD growth using ethanol on Ga liquid surfaces in atmosphere pressure

〇Tomoki Tsuji¹, Kenta Arima¹, Kazuya Yamamura¹, Kentarou Kawai¹ (1.Osaka university)

4:30 PM - 4:45 PM

[19p-E308-13] Growth of Monolayer Hexagonal Boron Nitride Single-Crystals on Graphite by Chemical Vapor Deposition

〇Hayato Arai¹, Taiki Inoue¹, Rong Xiang¹, Shohei Chiashi¹, Shigeo Maruyama^1,2 (1.Univ. of Tokyo, 2.AIST)

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