Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-E310-1~21] 15.4 III-V-group nitride crystals

Fri. Sep 20, 2019 1:15 PM - 7:00 PM E310 (E310)

Narihito Okada(Yamaguchi Univ.), Yoshio Honda(Nagoya Univ.), Tomoyuki Tanikawa(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[20p-E310-1] High-speed Homoepitaxial Growth of AlN by HVPE and Its Influences on Crystalline Quality

〇Daichi Saito¹, Yudai Shimizu¹, Nao Takekawa¹, Ken Goto¹, Toru Nagashima², Reo Yamamoto², Bo Monemar³, Yoshinao Kumagai^1,4 (1.Tokyo Univ. of Agri. and Tech., 2.Tokuyama Corporation, 3.Linkoping Univ., 4.TUAT IGIR)

1:30 PM - 1:45 PM

[20p-E310-2] Influence of NH₃ partial pressure on homoepitaxial growth of AlN by HVPE

〇Nao Takekawa¹, Daichi Saito¹, Yudai Shimizu¹, Ken Goto¹, Toru Nagashima², Reo Yamamoto², Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agri. and Tech., 2.Tokuyama Corporation, 3.TUAT IGIR)

1:45 PM - 2:00 PM

[20p-E310-3] Improvement of surface flatness using H₂ etching in N-polar AlN

〇Ryota Sakamoto¹, Tatuya Isono¹, Tadatoshi Ito¹, Kazuya Ataka², Hiroshi Kawamura², Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Grad.School of Sci., 2.Department of Eng,Yamaguchi Univ.)

2:00 PM - 2:15 PM

△ [20p-E310-4] Epitaxial lateral overgrowth of AlN on vicinal sapphire substrate

〇Takahiro Saito¹, Ryouta Nakamura², Sachie Fuzikawa⁴, Fijun Kim¹, Tetutoshi Maeda³, Narihito Okada¹, Hideki Hirayama³, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.Department of Eng., Yamaguchi Univ., 3.RIKEN, 4.Tokyo Denki Univ.)

2:15 PM - 2:30 PM

△ [20p-E310-5] Growth of Al_0.55Ga_0.45N thick films on AlN templates with nano-sized patterned grooves

〇(M1)Shouhei Teramura¹, Sakuragi Yusuke¹, Yasue Shinji¹, Tanaka Shunya¹, Ogino Yuya¹, Iwaya Motoaki¹, Takeuchi Tsuya¹, Kamiya Satoshi¹, Iwayama Sho^1,3, Akasaki Isamu², Miyake Hideto³ (1.Dept. of Mat. Sci. & Eng., Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Grad. Sch. of Reg. Inn. Stu., Mie Univ.)

2:30 PM - 2:45 PM

[20p-E310-6] GaN growth on high-quality {20-21} GaN template using wide-masks by hydride vapor phase epitaxy

〇Syogo Shigu¹, Kano Soichiro², Okada Narihito¹, Jie Song³, Jung Han³, Tadatomo Kazuyuki¹ (1.Grad. School of Sci.&Eng.for Innovation,Yamaguchi Univ., 2.Department of Eng,Yamaguchi Univ., 3.Yale Univ.)

2:45 PM - 3:00 PM

[20p-E310-7] High-speed growth of high quality GaN using OVPE Method at high temperature

〇(B)Ayumu Shimizu¹, Masahiro Kamiyama², Keiju Ishibashi², Shintaro Tsuno², Akira Kitamoto², Masayuki Imanishi², Masashi Yoshimura^2,3, Masahiko Hata⁴, Masashi Isemura⁵, Yusuke Mori² (1.Sch. of Eng., Osaka Univ., 2.Grad. Sch. of Eng.,Osaka Univ., 3.ILE , Osaka Univ., 4.Itochu Plastics Inc., 5.Sosho-Ohshin Inc.)

3:15 PM - 3:30 PM

[20p-E310-8] Boron precursors of CVD grown BN thin films

〇Hisashi Yamada¹, Sho Inotsume^1,2, Toshikazu Yamada¹, Mituaki Shimizu^1,2 (1.AIST-NU GaN-OIL, 2.Nagoya Univ.)

3:30 PM - 3:45 PM

△ [20p-E310-9] Pit-reduction effect of Eu-doped GaN on GaN-related materials

〇Takaya Morikawa¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

3:45 PM - 4:00 PM

[20p-E310-10] Growth surface variation due to impurity-doping for vicinal (0001) GaN

〇Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

4:00 PM - 4:15 PM

△ [20p-E310-11] Enhanced red emission of Eu-doped GaN using two-dimensional photonic crystal nanocavities with hexagonal-shaped holes

〇Masato Murakami¹, Ichikawa Shuhei¹, Sasaki Yutaka¹, Tatebayashi Jun¹, Fujiwara Yasufumi¹ (1.Osaka univ.)

4:15 PM - 4:30 PM

△ [20p-E310-12] Fabrication of high photon extraction efficiency devices for GaN quantum dots

〇Tomoyuki Aoki¹, Kang Gao², Munetaka Arita², Yasuhiko Arakawa², Mark Holmes¹ (1.IIS, Univ. of Tokyo, 2.NanoQuine)

4:30 PM - 4:45 PM

▲ [20p-E310-13] High efficiency neutral-beam-etched nanodisk of InGaN/GaN MQWs buried with regrown GaN

〇Kexiong Zhang¹, T. Takahashi¹, N. Kumagai¹, G. W. Cong¹, D. Ohori², K. Endo¹, M. Shimizu^1,3, S. Samukawa², X. L. Wang^1,3 (1.AIST, 2.Tohoku Univ., 3.Nagoya Univ.)

4:45 PM - 5:00 PM

△ [20p-E310-14] MOVPE growth and structural characterizations of GaN nanowires and
GaInN/GaN multi-quantum shells

〇Nanami Goto¹, Naoki Sone^1,3, Kazuyoshi Iida^1,4, Weifang Lu¹, Hideki Murkami¹, Mizuki Terazawa¹, Jun Uzuhashi², Takashi Sekiguchi², Tadakatsu Ohkubo², Jun Chen², Wei Yi², Kazuhiro Hono², Masaki Ohya^1,4, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,5 (1.Meijo Univ., 2.NIMS, 3.Koito Manufacturing CO., Ltd, 4.Toyada Gosei Co., Ltd, 5.Akasaki Research Center, Nagoya Univ)

5:00 PM - 5:15 PM

△ [20p-E310-15] Precise composition control for AlInN/GaN DBRs by in-situ curvature measurements

〇(M2)Kei Hiraiwa¹, Wataru Muranaga¹, Sho Iwayama¹, Kazuki Kiyohara¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.ARC Nagoya Univ.)

5:30 PM - 5:45 PM

[20p-E310-16] Study on growth of p-GaN shell in nanowire-LED using core-shell structure

〇Naoki Sone^1,4, Nanami Goto⁴, Kazuyoshi Iida^2,4, Masaki Ohya^2,4, Weifang Lu⁴, Hideki Murakami⁴, Mizuki Terazawa⁴, Jun Uzuhashi³, Tadakatsu Ohkubo³, Kazuhiro Hono³, Satoshi Kamiyama⁴, Tetsuya Takeuchi⁴, Motoaki Iwaya⁴, Isamu Akasaki^4,5 (1.KOITO MANUFACTURING, 2.TOYODA GOSEI, 3.NIMS, 4.Meijo Univ., 5.Nagoya Univ.)

5:45 PM - 6:00 PM

[20p-E310-17] Effect of V-pit formation layer on InGaN/GaN MQW

〇Rei Kawamura¹, Yuki Inomata¹, Naoya Iwasaki², Tomoya Fujii², Narihito Okada¹, Satoshi Kurai¹, Yoiti Yamada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University Graduate School, 2.Yamaguchi University)

6:00 PM - 6:15 PM

[20p-E310-18] Investigation of LEDs on relaxed thick InGaN

〇Yuki Inomata¹, Rei Kawamura¹, Tomoya Fujii², Naoya Iwasaki², Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ., 2.Department of Eng., Yamaguchi Univ.)

6:15 PM - 6:30 PM

[20p-E310-19] Epitaxial growth of AlInN films on relaxed GaInN template

〇(M2)Mizuki Yamanaka¹, Makoto Miyoshi¹, Takashi Egawa¹, Narihito Okada², Kazuyuki Tadatomo², Tetsuya Takeuchi³ (1.Nagoya Inst. Tech., 2.Yamaguchi Univ., 3.Meijo Univ.)

6:30 PM - 6:45 PM

[20p-E310-20] Growth and characterization of quaternary AlGaInN epitaxial films nearly lattice-matched to GaN (2)

〇Hiroki Harada¹, Makoto Miyoshi¹, Takashi Egawa¹, Takeuchi Tetsuya² (1.Nagoya Inst., 2.Meijo Univ.)

6:45 PM - 7:00 PM

[20p-E310-21] Evaluation of In composition uniformity of AlInN barrier layer by Three Dimensional Atom Probe Analysis

〇Hajime Nago¹, Jumpei Tajima¹, Toshiki Hikosaka¹, Shinya Nunoue¹ (1.Toshiba Corp.)

Session information

[20p-E310-1~21] 15.4 III-V-group nitride crystals

[20p-E310-1] High-speed Homoepitaxial Growth of AlN by HVPE and Its Influences on Crystalline Quality

[20p-E310-2] Influence of NH₃ partial pressure on homoepitaxial growth of AlN by HVPE

[20p-E310-3] Improvement of surface flatness using H₂ etching in N-polar AlN

△ [20p-E310-4] Epitaxial lateral overgrowth of AlN on vicinal sapphire substrate

△ [20p-E310-5] Growth of Al_0.55Ga_0.45N thick films on AlN templates with nano-sized patterned grooves

[20p-E310-6] GaN growth on high-quality {20-21} GaN template using wide-masks by hydride vapor phase epitaxy

[20p-E310-7] High-speed growth of high quality GaN using OVPE Method at high temperature

[20p-E310-8] Boron precursors of CVD grown BN thin films

△ [20p-E310-9] Pit-reduction effect of Eu-doped GaN on GaN-related materials

[20p-E310-10] Growth surface variation due to impurity-doping for vicinal (0001) GaN

△ [20p-E310-11] Enhanced red emission of Eu-doped GaN using two-dimensional photonic crystal nanocavities with hexagonal-shaped holes

△ [20p-E310-12] Fabrication of high photon extraction efficiency devices for GaN quantum dots

▲ [20p-E310-13] High efficiency neutral-beam-etched nanodisk of InGaN/GaN MQWs buried with regrown GaN

△ [20p-E310-14] MOVPE growth and structural characterizations of GaN nanowires and
GaInN/GaN multi-quantum shells

△ [20p-E310-15] Precise composition control for AlInN/GaN DBRs by in-situ curvature measurements

[20p-E310-16] Study on growth of p-GaN shell in nanowire-LED using core-shell structure

[20p-E310-17] Effect of V-pit formation layer on InGaN/GaN MQW

[20p-E310-18] Investigation of LEDs on relaxed thick InGaN

[20p-E310-19] Epitaxial growth of AlInN films on relaxed GaInN template

[20p-E310-20] Growth and characterization of quaternary AlGaInN epitaxial films nearly lattice-matched to GaN (2)

[20p-E310-21] Evaluation of In composition uniformity of AlInN barrier layer by Three Dimensional Atom Probe Analysis

Authentication

Session information

[20p-E310-1~21] 15.4 III-V-group nitride crystals

△ [20p-E310-4] Epitaxial lateral overgrowth of AlN on vicinal sapphire substrate

△ [20p-E310-5] Growth of Al0.55Ga0.45N thick films on AlN templates with nano-sized patterned grooves

△ [20p-E310-9] Pit-reduction effect of Eu-doped GaN on GaN-related materials

△ [20p-E310-11] Enhanced red emission of Eu-doped GaN using two-dimensional photonic crystal nanocavities with hexagonal-shaped holes

△ [20p-E310-12] Fabrication of high photon extraction efficiency devices for GaN quantum dots

▲ [20p-E310-13] High efficiency neutral-beam-etched nanodisk of InGaN/GaN MQWs buried with regrown GaN

△ [20p-E310-14] MOVPE growth and structural characterizations of GaN nanowires and GaInN/GaN multi-quantum shells

△ [20p-E310-15] Precise composition control for AlInN/GaN DBRs by in-situ curvature measurements

Authentication

△ [20p-E310-5] Growth of Al_0.55Ga_0.45N thick films on AlN templates with nano-sized patterned grooves

△ [20p-E310-14] MOVPE growth and structural characterizations of GaN nanowires and
GaInN/GaN multi-quantum shells