Influence of hydrogen ion implantation dose on characteristics of Ge-on-insulator substrates fabricated by smart-cut technology

CheolMin Lim; Ziqiang Zhao; Kei Sumita; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[18p-B11-1~14] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Wed. Sep 18, 2019 1:15 PM - 5:00 PM B11 (B11)

Masaharu Kobayashi(Univ. of Tokyo), Shinji Migita(AIST), Hitoshi Wakabayashi(Tokyo Tech)

3:30 PM - 3:45 PM

▼ [18p-B11-9] Influence of hydrogen ion implantation dose on characteristics of Ge-on-insulator substrates fabricated by smart-cut technology

〇CheolMin Lim¹, Ziqiang Zhao¹, Kei Sumita¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

Keywords:Ge-on-insulator, Smart-cut, Ion implantation

The effect of the hydrogen ion implantation dose on the physical and electrical characteristics of the GOI layers fabricated the smart-cut process was experimentally investigated. The high I/I dose (1×10¹⁷ cm^-2) condition has been found to cause more damages resulting in the degradation of the hole mobility than the low I/I dose (4×10¹⁶ cm^-2) condition