The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[19a-E304-1~12] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E304 (E304)

Reo Kometani(Univ. of Tokyo), Fukushima Takafumi(Tohoku University)

9:15 AM - 9:30 AM

[19a-E304-2] MEMS Rogowski Coil with multi-TSV Current Terminal

Yoshiyuki Watanabe1, Mutsuto Kato1, Toru Yahagi1, Hiroki Murayama1, Shinji Kunori2, Kenichi Yoshida2, Kazuyuki Sashida2, Daisuke Arai2, Katsuya Ikeda2, Ryosuke Ikeda2, Toshiyuki Takemori2 (1.Yamagata ResInsTech, 2.Shindengen)

Keywords:Rogowski coil, MEMS, current sensor

We have fabricated an MEMS Rogowski coil current sensor for overcurrent detection in power devices (device size 10×10×0.3mm3). This device has a 137 turns spiral current sensing coil ( via diameter 100µm) and a vertical current terminal with multi-TSV. When the TSV current terminal was energized with a device using a high resistivity silicon substrate (> 10,000 Ωcm), stable current detection was realized.