2019年第80回応用物理学会秋季学術講演会

講演情報

一般セッション(ポスター講演)

16 非晶質・微結晶 » 16.3 シリコン系太陽電池

[19a-PA4-1~14] 16.3 シリコン系太陽電池

2019年9月19日(木) 09:30 〜 11:30 PA4 (第一体育館)

09:30 〜 11:30

[19a-PA4-6] Effect of annealing temperature on Al2O3/NAOS/Si MOS interface properties

〇(D)WEI FU1、Xufang Zhang1、Hiroshi Umishio1、Aboulaye Traore1、Hiroshi Yano1、Takeaki Sakurai1 (1.Univ. of Tsukuba)

キーワード:Si solar cells, interface passivation, Al2O3/NAOS combination layer

Aluminum oxide (Al2O3) and Silicon nitride (a-SiNx: H) provide an outstanding level of interface passivation on crystalline silicon. An ultrathin SiO2 layer formed by nitric acid oxidation of Si (NAOS) was used in combination with SiNx to improve the interfacial properties of Si solar cells. In order to understand the passivation properties of Al2O3/NAOS combination layer, in this work, we investigated the influence of post-annealing temperature on the interfacial properties at the Al2O3/NAOS/Si MOS structure.