[19p-E305-1~15] 13.3 Insulator technology

▼ [19p-E305-15] Evaluation of Border Traps in Al₂O₃/GeO_x/p-Ge Stacks Using Deep-Level Transient Spectroscopy

〇(DC)Weichen Wen¹, Keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima² (1.IGSES, Kyushu Univ., 2.GIC, Kyushu Univ.)

Keywords:Border trap, DLTS, Ge MOS

Interface traps (ITs) and border traps (BTs) in Al₂O₃/GeO_x/p-Ge gate stacks were characterized using deep-level transient spectroscopy (DLTS). Through evaluating the gate stacks with several thicknesses of GeO_x, the BTs in Al₂O₃, at Al₂O₃/GeO_x interface, in GeO_x were detected. The highest density of BT was found at Al₂O₃/GeO_x interface.