[20a-C309-1~13] 6.1 Ferroelectric thin films

[20a-C309-2] Control of the preferential orientation and the crystal structure of HfO₂:Y/Si films by change in oxygen partial pressure

〇Yuki Saho¹, Daiki Kamada¹, Kenshi Takada¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

Keywords:HfO2, PLD, oxygen partial pressure

HfO₂:Y thin film was deposited on Si substrate by PLD method. According to the results of X-ray diffraction 2θ-ω measurement of samples prepared under conditions of oxygen partial pressure of 0.1 to 10 mtorr, (001) single orientation growth of HfO₂:Y thin film is 1 mtorr sample for samples of 1 mtorr or more (111) orientation growth in the direction can be confirmed. Also, from the results of X-ray diffraction 2θ-ω measurement and φ scan measurement of the sample deposited at 8.6 × 10^-8 torr, the HfO₂:Y thin film is epitaxially grown in the orientation of (111) <110> HfO₂:Y/Si can be confirmed. In the lecture, I will discuss the growth process using the results of in-situ observation by RHEED.