[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

△ [20a-E301-10] Effect of interface state density on channel mobility in GaN lateral MISFET 2.

〇Yuto Ando^1,6, Tohru Nakamura², Manato Deki², Noriyuki Taoka¹, Atsushi Tanaka^2,3, Hirotaka Watanabe², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hisashi Yamada⁶, Mitsuaki Shimizu^2,6, Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.NIMS, 4.ARC, Nagoya Univ., 5.VBL, Nagoya Univ., 6.AIST GaN-OIL)

Keywords:GaN, Dit, Channel mobility

To improve the performance of GaN-based MISFET, it is required to increase the channel mobility. In the case of SiO₂/Si system, it is known that the carrier scattering factors differ for effective field perpendicular to channel or surface carrier concentration. In this paper, we report that the effect of gate metallization process on the interface state density and the channel mobility in Al₂O₃/GaN interface.