[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

△ [20a-E301-11] Influence of ALD Precursor on Electrical Properties of Al₂O₃/AlGaN/GaN MIS Structure

〇(M2)Masato Higashi¹, Mutsunori Uenuma¹, Koji Yoshitsugu², Eiji Yagyu², Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Mitsubishi Electric Corp.)

Keywords:AlGaN/GaN, DMAH, atomic layer deposition

DMAH (C₂H₇Al) and TMA (C₃H₉Al) were used as Al precursor of ALD to deposite the insulator for fabrication the Al₂O₃/AlGaN/GaN MIS structure. Electrical characteristics were compared between DAMH and TMA. In Al₂O₃/AlGaN/GaN MIS structure, it was clarified that DMAH was able to improve interface characteristics as compared with TMA.