1:35 PM - 2:05 PM
[20p-E301-2] Damage-free Polishing of GaN Substrate Using Catalyst-referred Etching
Keywords:Gallium nitride, Polishing, CARE
Presentation information
Symposium (Oral)
Symposium (technical) » Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process
[20p-E301-1~9] Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process
Fri. Sep 20, 2019 1:30 PM - 5:35 PM E301 (E301)
Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)