[20p-E301-1~9] Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process

[20p-E301-3] Atomic Scale Processing
for GaN Devices

〇Shohei Ito¹, Agnieszka Kurek¹, Mike Cooke¹ (1.Oxford Instruments)

Keywords:ALE, ALD, GaN

GaN substrate can be produce higly effecient MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistor) debvices.
Also GaN surface is one of the most process sensitive in the electronic industry due to easy oxidation.
our target goal to achieve careful, and controlled process at the GaN surface for best device perfomance by using ALD/ALE process.
Atomic Scale Processing for GaN Devices