〇Shinji Yamada^1,2,3, Hideki Sakurai^1,2,3, Yamato Osada³, Toshiyuki Nakamura³, Ryuichiro Kamimura³, Jun Suda^1,2, Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.Nagoya Univ., 3.ULVAC ISET)

4:20 PM - 4:50 PM

[20p-E301-7] Two-dimensional characterization of etched GaN surfaces using scanning internal photoemission microscopy

〇Kenji Shiojima¹ (1.Univ. of Fukui)

4:50 PM - 5:20 PM

[20p-E301-8] Reliability Improvement of GaN HEMT by Chlorine Neutral Beam Etching

〇Kenta Sugawara¹, Masaya Okada¹, Hiroyuki Ichikawa¹, Kazutaka Inoue¹, Daisuke Ohori², Seiji Samukawa^2,3 (1.Sumitomo Electric Industries, Ltd., 2.IFS, Tohoku Univ., 3.AIMR, Tohoku Univ.)

5:20 PM - 5:35 PM

[20p-E301-9] Surface Treatment of Recess-etched GaN

〇Masahiko Kuraguchi¹, Toshiki Hikosaka¹, Aya Shindome¹, Yosuke Kajiwara¹, Daimotsu Kato¹, Hiroshi Ono¹, Akira Mukai¹, Shinya Nunoue¹ (1.Corporate R&D Center, Toshiba Corp.)

Sessions

Symposium (technical) » Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process

[20p-E301-1~9] Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process

[20p-E301-1] Introductory Talk

[20p-E301-2] Damage-free Polishing of GaN Substrate Using Catalyst-referred Etching

[20p-E301-3] Atomic Scale Processing
for GaN Devices

[20p-E301-4] Wet-etching of GaN for power and RF devices

[20p-E301-5] Mesa-structure Vertical GaN p-n Junction Diodes by PEC Etching

[20p-E301-6] Reduction of plasma-induced damage in ICP-RIE of n-type GaN by controlling bias power

[20p-E301-7] Two-dimensional characterization of etched GaN surfaces using scanning internal photoemission microscopy

[20p-E301-8] Reliability Improvement of GaN HEMT by Chlorine Neutral Beam Etching

[20p-E301-9] Surface Treatment of Recess-etched GaN

Authentication