Two-dimensional characterization of etched GaN surfaces using scanning internal photoemission microscopy

Kenji Shiojima

Presentation information

Symposium (Oral)

Symposium (technical) » Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process

[20p-E301-1~9] Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process

Fri. Sep 20, 2019 1:30 PM - 5:35 PM E301 (E301)

Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)

4:20 PM - 4:50 PM

[20p-E301-7] Two-dimensional characterization of etched GaN surfaces using scanning internal photoemission microscopy

〇Kenji Shiojima¹ (1.Univ. of Fukui)

Keywords:Schottky contact, etching, scanning internal photoemission microscopy

We developed scanning internal photoemission microscopy, which is a nondistractive mapping method to characterize electrical characteristics of Schottky contacts in 1989. In this presentation, we present our experimental results on etched GaN surfaces by ICP and photo-chemical wet etching.