[21a-B31-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21a-B31-3] Characterization of TiO₂ thin film photocatalyst prepared by rf-magnetron sputtering

Rahul Deshmukh¹, 〇Mitsuhiro Honda¹, Koji Abe¹, Kesuke Gotoh¹, Shinji Takayanagi^1,3, Yoshimi Horio², Yo Ichikawa¹ (1.Nitech, 2.Daido Univ., 3.Doshisha Univ.)

Keywords:TiO2 photocatalyst, thin film

TiO2 thin films as a photocatalyst have gained great attention due to their superior properties such as high chemical stability, nontoxicity as well as their applications in the development of environmentally harmonious, sustainable, and energy-efficient technologies. Radio frequency (rf) magnetron sputtering have been one of the preferred methods for synthesizing TiO2 thin films as it can produce a highly uniform thin film, where the relation between sputtering conditions and structural, optical and morphological properties of thin films were mostly focused. In the present study, using rf magnetron sputtering, we prepared TiO2 thin films with different thickness on a quartz substrate by changing the deposition time, and their optical, structural, and electronic properties were investigated by several characterization techniques.