Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[9a-PB3-1~18] 15.6 Group IV Compound Semiconductors (SiC)

Sat. Mar 9, 2019 9:30 AM - 11:30 AM PB3 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[9a-PB3-1] Solution growth of SiC using Cr-Al solvent

〇Kouki Suzuki¹, Toshinori Taishi¹ (1.Shinshu Univ. (Eng.))

9:30 AM - 11:30 AM

[9a-PB3-2] Thick epitaxial growth on 4H-SiC C-face on-axis substrates

〇Keiko Masumoto¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST)

9:30 AM - 11:30 AM

[9a-PB3-3] Measurement of Electrical Properties for The Buffer Layer in 4H-SiC Wafer with 3 Layer Structure Using THz-TDSE

〇Kiichi Sato¹, Takashi Fujii^1,3, Tsutomu Araki¹, Shinichiro Mori¹, Kotaro Ishiji², Toshiyuki Iwamoto³, Ryuichi Sugie⁴ (1.Ritsumeikan Univ., 2.Kyushu Synchrotron Light Research Center, 3.PNP, 4.TRC)

9:30 AM - 11:30 AM

[9a-PB3-4] Behavior of Surface Organic Contaminants on 4H-SiC Substrate

〇Haruto Koriyama¹, Yoshiharu Enta¹ (1.Hirosaki Univ.)

9:30 AM - 11:30 AM

[9a-PB3-5] Structural Identification of the Single-Photon Sources Formed on SiC Surface using Isotope Oxygen

〇Yasuto Hijikata¹, Yu-ichiro Matsushita², Takeshi Ohshima³ (1.Saitama Univ., 2.Tokyo Tech., 3.QST)

9:30 AM - 11:30 AM

[9a-PB3-6] High-precision ion-implantation on 4H-SiC by ion-implantation angle control

〇(B)Tomonori Okada¹, Jun Inoue¹, Fumitaka Nishiyama¹, Hiroshi Sezaki², Shin-Ichiro Kuroki¹ (1.RNBS, 2.Phenitec Semicon)

9:30 AM - 11:30 AM

[9a-PB3-7] SiC Deep Etching by the BOSCH Process for Making 4H-SiC CMOS Logic Circuits

〇(B)Kenshiro Morimoto¹, Kosuke Muraoka¹, Kazutoshi Kojima², Shin-Ichiro Kuroki¹ (1.RNBS, 2.AIST)

9:30 AM - 11:30 AM

[9a-PB3-8] Distinguishing nitrogen-containing sites in SiO₂/SiC by X-ray absorption spectroscopy

〇Noritake Isomura¹, Katsuhiro Kutsuki¹, Keita Kataoka¹, Yukihiko Watanabe¹, Yasuji Kimoto¹ (1.Toyota CRDL)

9:30 AM - 11:30 AM

[9a-PB3-9] NO molecules reaction to 4H-SiC (1-100) /SiO₂ interface calculated by DFTB simulations

〇Miki Ogasawara¹, Takayuki Hirose¹ (1.Fuji Electric)

9:30 AM - 11:30 AM

[9a-PB3-10] The oxidation simulation of 4H-SiC with O₂ molecules on (1-100) face

〇Takayuki Hirose¹, Miki Ogasawara¹ (1.Fuji Electric)

9:30 AM - 11:30 AM

▲ [9a-PB3-11] Influence of biaxial stress on the electron transport properties at SiO2/4H-SiC interfaces

〇(D)WEI FU¹, Akiko Ueda², Hiroshi Yano¹, Shinsuke Harada², Takeaki Sakurai¹ (1.Tsukuba Univ., 2.AIST)

9:30 AM - 11:30 AM

[9a-PB3-12] Effect of Mechanical Uniaxial Stress on Mobility in 4H-SiC(0001) MOSFET

〇Wakana Takeuchi^1,2, Katsuhiro Kutsuki³, Eiji Kagoshima⁴, Toru Onishi⁴, Shinya Iwasaki⁴, Mitsuo Sakashita², Hirokazu Fujiwara⁴, Osamu Nakatsuka² (1.Aichi institute of tech., 2.Nagoya Univ, 3.Toyota Central R&D LABS., INC, 4.TOYOTA MOTOR CORP.)

9:30 AM - 11:30 AM

[9a-PB3-13] Radiation response of 4 H-SiC JFETs in in high dose region

〇Akinori Takeyama¹, Keigo Shimizu², Takahiro Makino¹, Yuichi Yamazaki¹, Takeshi Ohshima¹, Shin-ichiro Kuroki³, Yasunori Tanaka² (1.QST, 2.AIST, 3.RNBS, Hiroshima Univ.)

9:30 AM - 11:30 AM

[9a-PB3-14] Development of high blocking voltage 4H-SiC Schottky-pn diode

〇Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST)

9:30 AM - 11:30 AM

[9a-PB3-15] Power cycling lifetime improvement of SiC-MOSFETs by annealing treatment

〇Tatsuhiro Suzuki¹, Mari Yamashita¹, Nobuo Kojima¹, Satoshi Tanimoto^1,2, Kan Akatsu² (1.PEAL, NISSAN ARC, 2.Shibaura Inst. Tech.)

9:30 AM - 11:30 AM

[9a-PB3-16] High Temperature Switching Test of SiC-MOSFET Half-Bridge Power Modules installed in In-Wheel Motor

〇Satoshi Tanimoto^1,3, Mari Yamashita¹, Nobuo Kojima¹, Tastuhiro Suzuki¹, Sawa Araki¹, Shinji Sato², Kan Akatsu³ (1.PEAL, NISSAN ARC, 2.ADPERC, AIST, 3.Shibaura Inst. Tech.)

9:30 AM - 11:30 AM

[9a-PB3-17] Metallized ceramic substrate/baseplate structure using Cr-Cu/Cu clad material applicable to power module

〇Nobuo Kojima¹, Mari Yamashita¹, Tatsuhiro Suzuki¹, Sawa Araki¹, Satoshi Tanimoto^1,2, Kan Akatsu² (1.NISSAN ARC, 2.Shibaura Inst. Tech.)

9:30 AM - 11:30 AM

[9a-PB3-18] Vibration Endurance Test of SiC Half-Bridge Power Modules built in In-Wheel Motor

〇Mari Yamshita¹, Nobuo Kojima¹, Tatsuhiro Suzuki¹, Sawa Araki¹, Satoshi Tanimoto¹, Kan Akatsu² (1.NISSAN ARC, Ltd, 2.Shubaura Inst Tech)

Session information

[9a-PB3-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[9a-PB3-1] Solution growth of SiC using Cr-Al solvent

[9a-PB3-2] Thick epitaxial growth on 4H-SiC C-face on-axis substrates

[9a-PB3-3] Measurement of Electrical Properties for The Buffer Layer in 4H-SiC Wafer with 3 Layer Structure Using THz-TDSE

[9a-PB3-4] Behavior of Surface Organic Contaminants on 4H-SiC Substrate

[9a-PB3-5] Structural Identification of the Single-Photon Sources Formed on SiC Surface using Isotope Oxygen

[9a-PB3-6] High-precision ion-implantation on 4H-SiC by ion-implantation angle control

[9a-PB3-7] SiC Deep Etching by the BOSCH Process for Making 4H-SiC CMOS Logic Circuits

[9a-PB3-8] Distinguishing nitrogen-containing sites in SiO₂/SiC by X-ray absorption spectroscopy

[9a-PB3-9] NO molecules reaction to 4H-SiC (1-100) /SiO₂ interface calculated by DFTB simulations

[9a-PB3-10] The oxidation simulation of 4H-SiC with O₂ molecules on (1-100) face

▲ [9a-PB3-11] Influence of biaxial stress on the electron transport properties at SiO2/4H-SiC interfaces

[9a-PB3-12] Effect of Mechanical Uniaxial Stress on Mobility in 4H-SiC(0001) MOSFET

[9a-PB3-13] Radiation response of 4 H-SiC JFETs in in high dose region

[9a-PB3-14] Development of high blocking voltage 4H-SiC Schottky-pn diode

[9a-PB3-15] Power cycling lifetime improvement of SiC-MOSFETs by annealing treatment

[9a-PB3-16] High Temperature Switching Test of SiC-MOSFET Half-Bridge Power Modules installed in In-Wheel Motor

[9a-PB3-17] Metallized ceramic substrate/baseplate structure using Cr-Cu/Cu clad material applicable to power module

[9a-PB3-18] Vibration Endurance Test of SiC Half-Bridge Power Modules built in In-Wheel Motor

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