Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[9p-M114-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sat. Mar 9, 2019 1:15 PM - 3:45 PM M114 (H114)

Yasuo Cho(Tohoku Univ.), Wenchang Yeh(Shimane Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[9p-M114-1] SiC Nano-Dot Formation in Bulk-Si using Hot C⁺ Ion Implantation (Ⅳ): Surface Orientation Dependency

〇Masaki Yamamoto¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Tokyo Univ Agri. Tech.)

1:30 PM - 1:45 PM

[9p-M114-2] SiC Nano-Dot Formation in Poly-Si and Amorphous-Si Substrates
using Hot C⁺ Ion Implantation (Ⅱ) : C⁺Dose Dependency

〇Rikito Kanazawa¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Tokyo Univ Agri. Tech.)

1:45 PM - 2:00 PM

[9p-M114-3] Highly activated junctions using Flash Lamp Annealing tool with sub-milliseconds shorter pulses

Akitsugu Ueda¹, 〇Hideaki Tanimura¹, Hikaru Kawarazaki¹, Takahiro Yamada¹, Kazuhiko Fuse¹, Takayuki Aoyama¹, Shinichi Kato¹, Yasuhide Nozaki¹ (1.SCREEN Semiconductor Solutions)

2:00 PM - 2:15 PM

[9p-M114-4] Impurity Doping with High Concentration Using Flash Lamp Annealing and Sol-Gel Coating (SGC)

〇Hideaki Tanimura¹, Kazuhiko Fuse¹, Takayuki Aoyama¹, Shinichi Kato¹, Yasuhide Nozaki¹ (1.SCREEN Semiconductor Solutions)

2:15 PM - 2:30 PM

[9p-M114-5] Carrier Distribution Imaging Using Higher-Harmonic ∂C/∂z-SNDM Signals

〇Yoshiomi Hiranaga¹, Yasuo Cho¹ (1.RIEC, Tohoku Univ.)

2:30 PM - 2:45 PM

[9p-M114-6] Four terminal Cu-MIC poly-Ge_xSn_1-x TFTs with high-k gate dielectric

〇Ryo Miyazaki¹, Hiroki Utumi¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

2:45 PM - 3:00 PM

[9p-M114-7] Transfer Time Shortening on Low temperature Meniscus Force Mediated Layer Transfer

〇(B)Ryuji Kawakita¹, Tomotaka Hirano¹, Hiroaki Hanahusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Sciences of Matter, Hiroshima Univ)

3:00 PM - 3:15 PM

[9p-M114-8] Development of Low Temperature process Technology for Floating Gate Memory Device Fabrication on Plastic Substrate

〇(M2)Fumiyasu Kondo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Sciences of Matter,Hiroshima Univ)

3:15 PM - 3:30 PM

△ [9p-M114-9] Filter less spectroscopic method using transient response of PD

〇Nobuhiro Watanabe¹, Toshihiko Noda², Kazuaki Sawada², Masahiro Akiyama¹ (1.National Institute of Technology, Nagano College, 2.Toyohashi University of Technology)

3:30 PM - 3:45 PM

[9p-M114-10] Stress Evaluation of Plasma CVD Deposited SiN and a-C Films using Raman Spectroscopy

〇Masato Koharada¹, Ryo Yokogawa^1,2, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC)

Session information