Oral presentation

22 Joint Session M ”Phonon Engineering” » 22.1 Joint Session M "Phonon Engineering"

[9p-W371-1~16] 22.1 Joint Session M "Phonon Engineering"

Sat. Mar 9, 2019 1:45 PM - 6:15 PM W371 (W371)

Yoshiaki Nakamura(Osaka Univ.), Takanobu Watanabe(Waseda Univ.), Hiroya Ikeda(Shizuoka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [9p-W371-1] Evaluation of Thermal Properties for Nanostructures in Polycrystalline Silicon Grains by Raman Spectroscopy

〇(B)Haruki Takeuchi¹, Ryo Yokogawa^1,2, Kazuya Takahashi³, Katuhiko Komori³, Tamotu Morimoto³, Naomi Sawamoto¹, Atushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC, 3.Tokyo Electron Technology Solutions Ltd)

2:00 PM - 2:15 PM

△ [9p-W371-2] Evaluation of Thermal Properties near Si Nanowire Covered with Oxide Film by Raman Spectroscopy

〇Ryo Yokogawa^1,2, Motohiro Tomita^1,3, Takanobu Watanabe³, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC, 3.Waseda Univ.)

2:15 PM - 2:30 PM

[9p-W371-3] Temperature and composition dependence of semi-ballistic heat conduction in Si_1-xGe_x nanowires

〇Noboru Okamoto¹, Ryoto Yanagisawa¹, Alam Mahfuz², Kentaro Sawano², Masashi Kurosawa^3,4, Masahiro Nomura¹ (1.IIS Univ. of Tokyo, 2.Tokyo City Univ., 3.Nagoya Univ., 4.PRESTO JST)

2:30 PM - 2:45 PM

[9p-W371-4] Phonon scattering in heavy element-substituted Fe₂VAl superlattice thin films

〇(PC)Seongho Choi¹, Satoshi Hiroi², Manabu Inukai³, Dogyun Byeon¹, Masaharu Matsunami¹, Tsunehiro Takeuchi^1,4 (1.Toyota Tech. Inst., 2.NIMS, 3.Nagoya Inst. Tech., 4.JST PRESTO)

2:45 PM - 3:00 PM

△ [9p-W371-5] Analysis of thermal boundary conductance at diamond/copper interface and fabrication of high thermal-conductivity composite

〇(PC)BIN XU¹, Shih-Wei Hung¹, Junichiro Shiomi¹ (1.Univ. Tokyo)

3:15 PM - 3:30 PM

△ [9p-W371-6] Phonon transport analysis and microstructure control of Chalcopyrite CuFeS₂

〇(P)Naoki Sato¹, Pei Se Gan^1,2, S. N. Vijayaraghavan¹, Yohei Kakefuda¹, Naoyuki Kawamoto¹, Naohito Tsujii¹, Takao Mori^1,2 (1.NIMS, 2.Univ. Tsukuba)

3:30 PM - 3:45 PM

△ [9p-W371-7] Characteristics of Carrier Mobility and Phonon Scattering by Controlling Spacing of Si Nanopillars in SiGe

〇(PC)Daisuke Ohori¹, Hidesato Kuboyama⁴, Masayuki Murata³, Atsushi Yamamoto³, Masahiro Nomura⁵, Kazuhiko Endo^1,3, Seiji Samukawa^1,2,3 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.AIST, 4.TUS, 5.IIS, Univ. of Tokyo)

3:45 PM - 4:00 PM

△ [9p-W371-8] The enhancement of thermoelectric power factor in SiGe bulk
using thermal distribution method

〇(DC)Shunya Sakane¹, Takafumi Ishibe¹, Takeshi Fujita², Satoaki Ikeuchi³, Yoshinari Kamakura⁴, Nobuya Mori⁴, Yoshiaki Nakamura¹ (1.Osaka Univ. Eng. Sci., 2.Kochi Univ. Technol., 3.ADVANCE RIKO, 4.Osaka Univ. Eng.)

4:00 PM - 4:15 PM

[9p-W371-9] Surface potential measurements of thermoelectric materials under temperature gradient for local Seebeck coefficient mapping

〇Yuji Miyato¹, Yuki Komatsubara¹, Takafumi Ishibe¹, Yoshiaki Nakamura¹ (1.Osaka Unvi.)

4:15 PM - 4:30 PM

[9p-W371-10] Fabrication and characterization of individual single crystal bismuth wire

〇Yasuhiro Hasegawa¹, Mioko Otsuka^1,2, Taichi Arisaka¹, Ryo Shinozaki¹, Hiroyuki Morita^1,3 (1.Saitama Univ., 2.JSPS DC1, 3.SAITEC)

4:30 PM - 4:45 PM

[9p-W371-11] Temperature dependence of mobility for single crystal of Bismuth wire

〇(DC)Otsuka Mioko^1,2, Taichi Arisaka¹, Ryo Shinozaki¹, Hiroyuki Morita^1,3, Yasuhiro Hasegawa¹ (1.Saitama Univ., 2.JSPS DC1, 3.SAITEC)

5:00 PM - 5:15 PM

[9p-W371-12] Transparent reflecting films based on oxide semiconductor plasmonics for thermal-shielding:
toward simultaneous cuts of solar-thermal and heat-radiation

〇Hiroaki Matsui¹, Hitoshi Tabata¹ (1.The Univ. of Tokyo)

5:15 PM - 5:30 PM

[9p-W371-13] Study on Test Device to Evaluate Thermoelectromotive Force, Thermal and Electrical Resistances of Nanowire

〇(M1)Yuto Goi¹, Ko Akiba¹, Toshiaki Yorigami¹, Hiroaki Satoh¹, Motohiro Tomita², Takashi Matsukawa³, Takeo Matsuki^2,3, Hiroya Ikeda¹, Takanobu Watanabe², Hiroshi Inokawa¹ (1.Shizuoka Univ., 2.Waseda Univ., 3.AIST)

5:30 PM - 5:45 PM

[9p-W371-14] Design of planar type thermoelectric device using CNT sheet with anisotropic thermal conductivity

〇(M2)Keisuke Shima¹, Motohiro Tomita¹, Masamichi Matsumoto², Tsuyohiko Fujigaya^2,3, Takanobu Watanabe¹ (1.Waseda Univ., 2.Kyushu Univ., 3.JST-PRESTO)

5:45 PM - 6:00 PM

△ [9p-W371-15] Heat flow switching devices operated with bias voltage

〇(M1)Takuya Matsunaga¹, Keisuke Hirata¹, Masaharu Matsunami¹, Tsunehiro Takeuchi¹ (1.Toyota Tech. Inst.)

6:00 PM - 6:15 PM

[9p-W371-16] Thermal conductivity change associated with lithium intercalation in amorphous WO₃films

〇(M2)Ryuta Kobayashi¹, Tong Shen¹, Ayano Nakamura¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST)

Session information

[9p-W371-1~16] 22.1 Joint Session M "Phonon Engineering"

△ [9p-W371-1] Evaluation of Thermal Properties for Nanostructures in Polycrystalline Silicon Grains by Raman Spectroscopy

△ [9p-W371-2] Evaluation of Thermal Properties near Si Nanowire Covered with Oxide Film by Raman Spectroscopy

[9p-W371-3] Temperature and composition dependence of semi-ballistic heat conduction in Si_1-xGe_x nanowires

[9p-W371-4] Phonon scattering in heavy element-substituted Fe₂VAl superlattice thin films

△ [9p-W371-5] Analysis of thermal boundary conductance at diamond/copper interface and fabrication of high thermal-conductivity composite

△ [9p-W371-6] Phonon transport analysis and microstructure control of Chalcopyrite CuFeS₂

△ [9p-W371-7] Characteristics of Carrier Mobility and Phonon Scattering by Controlling Spacing of Si Nanopillars in SiGe

△ [9p-W371-8] The enhancement of thermoelectric power factor in SiGe bulk
using thermal distribution method

[9p-W371-9] Surface potential measurements of thermoelectric materials under temperature gradient for local Seebeck coefficient mapping

[9p-W371-10] Fabrication and characterization of individual single crystal bismuth wire

[9p-W371-11] Temperature dependence of mobility for single crystal of Bismuth wire

[9p-W371-12] Transparent reflecting films based on oxide semiconductor plasmonics for thermal-shielding:
toward simultaneous cuts of solar-thermal and heat-radiation

[9p-W371-13] Study on Test Device to Evaluate Thermoelectromotive Force, Thermal and Electrical Resistances of Nanowire

[9p-W371-14] Design of planar type thermoelectric device using CNT sheet with anisotropic thermal conductivity

△ [9p-W371-15] Heat flow switching devices operated with bias voltage

[9p-W371-16] Thermal conductivity change associated with lithium intercalation in amorphous WO₃films

Authentication

Session information

[9p-W371-1~16] 22.1 Joint Session M "Phonon Engineering"

△ [9p-W371-1] Evaluation of Thermal Properties for Nanostructures in Polycrystalline Silicon Grains by Raman Spectroscopy

△ [9p-W371-2] Evaluation of Thermal Properties near Si Nanowire Covered with Oxide Film by Raman Spectroscopy

△ [9p-W371-5] Analysis of thermal boundary conductance at diamond/copper interface and fabrication of high thermal-conductivity composite

△ [9p-W371-6] Phonon transport analysis and microstructure control of Chalcopyrite CuFeS2

△ [9p-W371-7] Characteristics of Carrier Mobility and Phonon Scattering by Controlling Spacing of Si Nanopillars in SiGe

△ [9p-W371-8] The enhancement of thermoelectric power factor in SiGe bulkusing thermal distribution method

△ [9p-W371-15] Heat flow switching devices operated with bias voltage

Authentication

△ [9p-W371-6] Phonon transport analysis and microstructure control of Chalcopyrite CuFeS₂

△ [9p-W371-8] The enhancement of thermoelectric power factor in SiGe bulk
using thermal distribution method