Symposium (Oral)

[11p-W933-1~11] Symposium on Crystal Science with Synchrotron Radiation

Mon. Mar 11, 2019 1:30 PM - 6:45 PM W933 (W933)

Masamitsu Takahasi(QST), Tomoyuki Tanikawa(Tohoku Univ.), Takuo Sasaki(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[11p-W933-1] Synchrotron Radiation Analyses of Energy Devices

〇Masaharu Oshima^1,2 (1.Univ. of Tokyo, ISSP, 2.Tokyo City Univ.)

2:00 PM - 2:30 PM

[11p-W933-2] Synchrotron X-ray Diffraction Measurements in Hetero-epitaxial Growth of GaInN by RF-MBE

〇Tomohiro Yamaguchi¹, Takuo Sasaki², Masamitsu Takahasi², Takeyoshi Onuma¹, Tohru Honda¹, Tsutomu Araki³, Yasushi Nanishi³ (1.kogakuin Univ., 2.QST, 3.Ritsumeikan Univ.)

2:30 PM - 3:00 PM

[11p-W933-3] Evaluation of valence band structure and surface oxidation process of III-V nitrides by photoemission spectroscopy using synchrotron radiation at SPring-8

〇Masatomo Sumiya¹, Shigenori Ueda¹, Akitaka Yoshigoe², Masato Sumita³ (1.NIMS, 2.JAEA, 3.Riken)

3:00 PM - 3:15 PM

[11p-W933-4] In situ X-ray structure analysis of liquid Ga layers on N-polar GaN

〇Takuo Sasaki¹, Masamitu Takahasi¹ (1.QST)

3:15 PM - 3:30 PM

[11p-W933-5] Real-time observation of bismuth thin-film growth on silicon and its structure at the interface

〇Hiroo Tajiri¹ (1.JASRI)

3:30 PM - 3:45 PM

▲ [11p-W933-6] Characterization of a 4-inch GaN wafer by X-ray diffraction topography

〇(PC)Jaemyung Kim¹, Okkyun Seo¹, Chulho Song¹, Yanna Chen¹, Satoshi Hiroi¹, Yoshihiro Irokawa¹, Toshihide Nabatame¹, Yasuo Koide¹, Osami Sakata¹ (1.NIMS)

4:15 PM - 4:45 PM

[11p-W933-7] Local Structural Analysis of GaN-based Mixed Semiconductors and GaN-based Quantum Core-shells by using Synchrotron Radiations

〇Takao Miyajima¹, Ryoma Seiki¹, Tsurugi Kondo¹, Takato Ichikawa¹, Toshiaki Ina², Kiyofumi Nitta², Tomoya Uruga², Kazuki Tsuruta², Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Nobuhiro Yasuda², Makoto Miyoshi³, Daichi Imai¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹ (1.Meijo Univ., 2.JASRI, 3.Nagoya Inst. Tech.)

4:45 PM - 5:15 PM

[11p-W933-8] Structural analysis of semiconductor materials and devices using synchrotron radiation nanobeam X-ray diffraction

〇Akira Sakai¹, Kazuki Shida¹, Akira Ueda¹, Tetsuya Tohei¹, Yasuhiko Imai², Kazushi Sumitani², Shigeru Kimura² (1.Osaka Univ., 2.JASRI)

5:15 PM - 5:45 PM

[11p-W933-9] Measurements of Energy Band Diagram using Hard X-ray Photoelectron Spectroscopy for GaN Power Devices

〇Keita Kataoka¹, Tetsuo Narita¹, Daigo Kikuta¹, Kenji Ito¹, Shin Tajima¹, Mitsutaro Umehara¹, Naoko Takahashi¹, Noritake Isomura¹ (1.Toyota Central R&D Labs.)

5:45 PM - 6:15 PM

[11p-W933-10] Progress in in situ synchrotron X-ray diffraction study of crystal growth

〇Masamitu Takahasi¹ (1.QST)

6:15 PM - 6:45 PM

[11p-W933-11] Panel Discussions

〇Masamitsu Takahashi¹, Masaharu Oshima^2,3, Tomohiro Yamaguchi⁴, Masatomo Sumiya⁵, Takao Miyajima⁶, Akira Sakai⁷, Keita Kataoka⁸ (1.QST, 2.Univ. of Tokyo, ISSP, 3.Tokyo City Univ., 4.Kogakuin Univ., 5.NIMS, 6.Meijo Univ., 7.Osaka Univ., 8.Toyota Central R&D Labs.)

Sessions

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