[10p-W922-1~8] Progress in ion implantation for semiconductor devices -Si, GaAs and WBG materials-

[10p-W922-5] Ion-implantation into GaAs -Application to GaAs LSIs-

〇Masaaki Kuzuhara¹ (1.Univ. Fukui)

Keywords:GaAs, ion implantation, activation annealing

Overview is given with respect to GaAs Ion-implantation technology. In the 1980s, GaAs MESFET LSI was regarded as a promising future technology alternative to existing Si-LSIs. Active layers were prepared by direct Si ion implantation into semi-insulating GaAs substrates. Features of technologies for shallow channel implants and high-electron density contact implants are reviewed.