[10p-W922-1~8] Progress in ion implantation for semiconductor devices -Si, GaAs and WBG materials-

[10p-W922-4] Design Concept of Impurity Layers’ Configurations in 3-Dimensional SiC MOSFETs

〇Digh Hisamoto¹, Naoki Tega¹, Kazuki Tani¹, Takeru Suto¹, Yuki Mori¹ (1.Hitachi, Ltd.)

Keywords:wide-gap semiconductor, SiC MOSFETs, 3-dimensional structure

Because of the high dielectric breakdown voltage of wide-gap semiconductors, it is required to design a device with a focus on "how to protect the dielectric film" unlike in the case of silicon.
Advanced ion implantation technique of SiC enables to realize the effective impurity diffusion layers’ configurations in the three-dimensional SiC MOSFETs. We clarify that device-reliability and -performance can be ensured at practical products level even in wide-gap semiconductor devices.