[10p-W922-1~8] Progress in ion implantation for semiconductor devices -Si, GaAs and WBG materials-

[10p-W922-3] Ion Implantation into SiC and Device Applications

〇Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:semiconductor, SiC, ion implantation

Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage and low-loss power devices. In this paper, fundamentals of ion implantation into SiC, its physical understanding, device applications, and remaining issues are presented.