〇Masataka Higashiwaki¹, Man Hoi Wong¹, Chia-Hung Lin¹, Kohei Sasaki², Ken Goto^2,3,4, Akito Kuramata², Shigenobu Yamakoshi^2,4, Hisashi Murakami³, Yoshinao Kumagai³ (1.NICT, 2.Novel Crystal Technology, 3.Tokyo Univ. of Agri., 4.Tamura Corp.)

5:20 PM - 5:50 PM

[10p-W922-8] Fabrication of single impurity defects in a regular array by ion implantation and its quantum application

〇Takashi Tanii¹, Takahiro Shinada², Tokuyuki Teraji³, Shinobu Onoda⁴, Takeshi Ohshima⁴, Liam McGuinness⁵, Fedor Jelezko⁵, Yan Liu⁶, E Wu⁶, Wataru Kada⁷, Osamu Hanaizumi⁷, Hiroshi Kawarada¹, Junichi Isoya⁸ (1.Waseda Univ., 2.Tohoku Univ., 3.NIMS, 4.QST, 5.Ulm Univ., 6.ECNU, 7.Gunma Univ., 8.Univ. of Tsukuba)

Sessions

Symposium » Progress in ion implantation for semiconductor devices -Si, GaAs and WBG materials-

[10p-W922-1~8] Progress in ion implantation for semiconductor devices -Si, GaAs and WBG materials-

[10p-W922-1] Ion Implantation – History has a lot to teach us -

[10p-W922-2] Advanced Si Power Semiconductor with High Dynamic Ruggedness utilizing Novel Vertical Structure

[10p-W922-3] Ion Implantation into SiC and Device Applications

[10p-W922-4] Design Concept of Impurity Layers’ Configurations in 3-Dimensional SiC MOSFETs

[10p-W922-5] Ion-implantation into GaAs -Application to GaAs LSIs-

[10p-W922-6] Ion Implantation Technology for GaN

[10p-W922-7] Advancement in Ga₂O₃ Ion-Implantation Technologies and Their Applications to Device Processing

[10p-W922-8] Fabrication of single impurity defects in a regular array by ion implantation and its quantum application

Authentication