[10p-W922-1~8] Progress in ion implantation for semiconductor devices -Si, GaAs and WBG materials-

[10p-W922-6] Ion Implantation Technology for GaN

〇Tetsu Kachi¹ (1.Nagoya Univ)

Keywords:ion implantation, GaN, activation

Ion implantation technology is an indispensable technology of power device process, but it is still under development in GaN. Although n-type ion implantation is almost at a practical level, p-type has a big problem. It is surface degradation and the occurrence of a large amount of nitrogen vacancy defects due to the high activation temperature. In this presentation, we will report about the present situation and application of n - type ion implantation and recent approaches to the problem of p - type ion implantation.