[10p-W922-1~8] Progress in ion implantation for semiconductor devices -Si, GaAs and WBG materials-

[10p-W922-7] Advancement in Ga₂O₃ Ion-Implantation Technologies and Their Applications to Device Processing

〇Masataka Higashiwaki¹, Man Hoi Wong¹, Chia-Hung Lin¹, Kohei Sasaki², Ken Goto^2,3,4, Akito Kuramata², Shigenobu Yamakoshi^2,4, Hisashi Murakami³, Yoshinao Kumagai³ (1.NICT, 2.Novel Crystal Technology, 3.Tokyo Univ. of Agri., 4.Tamura Corp.)

Keywords:gallium oxide, ion implantation

Gallium oxide (Ga₂O₃) has attracted much attention as one of next-generation power electronics materials due to its extremely large band gap energy of 4.5 eV and the availability of high-quality single-crystal substrates produced from melt-grown bulk crystals. In this talk, n- and p-type ion-implantation doping technologies we developed for Ga₂O₃ and vertical transistors successfully fabricated by using the technologies will be presented.