[10p-W934-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-W934-5] Scalability Study on Ferroelectric-HfO₂ Tunnel Junction Memory

〇FEI MO¹, Tagawa yusaku¹, Saraya Takuya¹, Hiramoto Toshiro¹, Kobayashi Masaharu¹ (1.IIs, univ. of Tokyo)

Keywords:memory, ferroelectric