4:30 PM - 4:45 PM
▼ [11p-W641-11] Etching reactions of Si, SiO2, and SiN films using with hydrofluorocarbon compounds
Keywords:Etching characteristics, poly-Si , SiO2 and SiN
Presentation information
Oral presentation
8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment
[11p-W641-1~14] 8.2 Plasma deposition of thin film, plasma etching and surface treatment
Mon. Mar 11, 2019 1:45 PM - 5:30 PM W641 (W641)
Daisuke Ogawa(Chubu Univ.), Kazunori Shinoda(HITACHI)