[11p-W641-1~14] 8.2 プラズマ成膜・エッチング・表面処理

▼ [11p-W641-11] Etching reactions of Si, SiO₂, and SiN films using with hydrofluorocarbon compounds

〇(M1)Jiawei Ni¹、Toshio Hayashi¹、Kenji Ishikawa¹、Takayoshi Tsutsumi¹、Hiroki Kondo¹、Makoto Sekine¹、Masaru Hori¹ (1.Nagoya University)

キーワード：Etching characteristics, poly-Si , SiO2 and SiN