[11p-W641-1~14] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[11p-W641-7] Electronic properties and dissociation channels of BF₃ and BCl₃ compounds

〇Toshio Hayashi¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ.)

Keywords:semiconductor, etching, electronic properties of molecules

It is argued about the electronic properties and dissociation process of BF3 and BCl3 in D3h structure experimentally and theoretically. There is not the objection about BF3, but we have a question about BCl3. Because a peak of 8.2 eV appeared in UV-VUV spectrum cannot be explained with the D3h structure. It is symmetric forbidden transition with the D3h structure, and this peak becomes the symmetrical allowed transition in C2v structure. Therefore, we reexamined the excitation dissociation processes along the C2v structure. As a result, it was revealed that BCl3 dissociated to BCl2+Cl by the transitions to the peaks appeared at around of 7eV and 9eV.