[11p-W641-1~14] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[11p-W641-9] Etching reactions with ions containing fluorine atoms

〇Kazuhiro Karahashi¹, Tomoko Ito¹, Junichi Hashimoto², Mitsuhiro Omura², Hisataka Hayashi², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Toshiba Momory Corporation)

Keywords:etching, silicon, fluorine