[9p-S221-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[9p-S221-3] Understanding of operating mechanisms of Zn(Sn)O/Si bilayer TFET based on measurement temperature dependence

〇Kimihiko Kato¹, Hiroaki Matsui¹, Hitoshi Tabata¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

Keywords:TFET, Oxide semiconductor, Temperature dependence

We are proposing bilayer tunneling field effect transistors (TFETs) by utilizing an n-type oxide semiconductor channel and a p-type group-IV semiconductor source for ultra-low power switching devices. In this study, we examined influence of measurement temperature on the electrical performance of the TFETs with a poly-crystalline ZnO channel or an amorphous ZnSnO channel in detail. It has been clarified that thickness fluctuation originated from the poly-crystalline structure and point-defect/tail-state originated from the amorphous structure could cause degradation of the sub-threshold characteristics. Material design with understanding the present trade-off characteristics can be important guideline for further improvement of the TFET performance.