[10p-Z10-1~17] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

△ [10p-Z10-10] [Highlight]Non-thermal conversion of liquid Si to solid phase by electron beam irradiation

〇Masahiro Mori¹, Masashi Akabori¹, Masahiko Tomitori¹, Takashi Masuda¹ (1.JAIST)

Keywords:liquid silicon, electron beam

Conventional semiconductor Si has been developed based on solid Si (wafer) and gaseous Si (silane) as starting materials. Herein, we report on "liquid Si" that is a precursor solution for semiconducting Si. Liquid Si provides a new methodology (solution route) for Si processes. The difficulty with liquid Si is that it requires high temperatures (360 °C) for liquid-to-solid Si conversion. This study reports an electron beam-induced liquid-to-solid Si conversion. It provides a novel Si processes that does not require a heating process based on liquid Si engineering.