[10p-Z10-1~17] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10p-Z10-8] Control of As clusters in Si by co-doping of As and B

〇Kazuo Tsutsui¹, Taihei Matsuhashi¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Tsutomu Nagayama², Takahiro Higuchi², Shinichi Kato³, Hideaki Tanimura³, Takayuki Muro⁴, Tomohiro Matsushita⁵, Yoshitada Morikawa⁶ (1.Tokyo Tech, 2.Nissin Ion Equipment, 3.SCREEN, 4.JASRI, 5.NAIST, 6.Osaka Univ.)

Keywords:co-doping, impurity clusters, activation

In the case of As doping in Si, some As atoms form clusters in which multiple substitutional As atoms gather around a Si vacancy, so called AsnV clusters, and are electrically deactivated. It was theoretically speculated that the As atoms are activated if a B atom occupies the vacancy. In this work, soft-X ray photoelectron spectroscopy using synchrotron radiation for the Si samples co-doped with As and B revealed a possibility that introduction of a B atom to the vacancy site in a AsnV cluster.