[10p-Z10-1~17] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10p-Z10-9] Influence of H₂ Annealing Process for Si-IGBT

〇(M1)Longxiang Men¹, Ryo Yokogawa^1,2, Yoichiro Numasawa^1,2, Kazuo Tsutsui³, Kuniyuki Kakushima³, Atsushi Ogura^1,2 (1.Meiji University, 2.MREL, 3.Tokyo Tech. Inst.)

Keywords:Silicon Insulated Gate Bipolar Transistor, Hydrogen Annealing

In the Si-IGBT (Silicon Insulated Gate Bipolar Transistor) fabrication process, a process of introducing hydrogen annealing for the purpose of reducing the interface state in a trench gate structure has been proposed. By performing the hydrogen annealing, it is expected that the interface of the trench portion is flattened, the decrease in mobility is suppressed, and the gate dielectric breakdown resistance is improved. Nevertheless, there are reports that new defect levels are generated inside the device. In particular, the SiO₂/Si interface state is one of the factors that directly determine the device operation, and it is important to evaluate the defect level and roughness at the SiO₂/Si interface in the trench. The purpose of this study is to clarify the influence of hydrogen annealing by evaluating the trench gate part subjected to hydrogen annealing in the Si-IGBT fabrication process, using Raman spectroscopy and cross-section observation by SEM and TEM.