Poster presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 15, 2020 9:30 AM - 11:30 AM PA5 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

▼ [15a-PA5-1] Enhancing power of ZnO nanoparticle LEDs using silica coated silver Nano particles

〇(M1)RAJ DEEP¹, Atsuya Tabuchi¹, Yuki Konishi¹, Islam Mohammad Shafiqul¹, Jie Lin², Toshiyuki Yoshida¹, Yasuhisa Fujita^1,2 (1.Shimane University, 2.SNCC Co. Ltd)

9:30 AM - 11:30 AM

▲ [15a-PA5-2] p-ZnO/n-ZnO Nanoparticles based UV Light Emitting Diodes

〇(D)ISLAM MOHAMMAD SHAFIQUL¹, Atsuya Tabuchi¹, Yuki Konishi¹, Chihiro Sakurai¹, Jie Lin², Toshiyuki Yoshida¹, Yasuhisa Fujita^1,2 (1.Shimane University, 2.SNCC Co., Ltd)

9:30 AM - 11:30 AM

[15a-PA5-3] Influence of wettability of surface modified gate insulator on electrical properties of amorphous In₂O₃thin-film transistors

〇(B)Keisuke Sasaki¹, Keisuke Nakamura¹, Shinya Aikawa¹ (1.kougakuin univ.)

9:30 AM - 11:30 AM

[15a-PA5-4] Growth partial pressure dependences and heat treatment effects on PLD growth of Al-doped ZnO thin films

〇(M1)Toshihiro Kumatani¹, Kazuyori Oura¹, Hideo Wada¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech.)

9:30 AM - 11:30 AM

[15a-PA5-5] Low temperature top-gate IGZO TFT using SiO:F film by ICP CVD

〇Toshihiko Sakai¹, Daisuke Matsuo¹, Masaki Fujiwara¹, Takuya Ikeda¹, Shigeaki Kishida¹, Yoshitaka Setoguchi¹, Yasunori Andoh¹, Ryoko Miyanaga², Mami Fujii², Yukiharu Uraoka² (1.Nissin Electric, 2.NAIST)

9:30 AM - 11:30 AM

[15a-PA5-6] Increase of Carrier density and Mobility of Ga:ZnO Films by Zn incorporation

〇Masaki Yamashita¹, Rei Sugiura¹, Yumika Yamada², Shuhei Funaki^1,2, Yasuji Yamada^1,2 (1.Shimane Univ.1, 2.Shimane Univ.2)

9:30 AM - 11:30 AM

[15a-PA5-7] Post-deposition Process for Improving Electrical Properties of Sol-gel Deposited ZnO

〇Koji Abe¹, Yasuhiro Morimoto¹ (1.Nagoya Inst. Tech.)

9:30 AM - 11:30 AM

[15a-PA5-8] Fabrication and characterization of In₂O₃transparent conductive films co-sputtered with CaF₂

〇(B)Kaito Oe¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

9:30 AM - 11:30 AM

[15a-PA5-9] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (4)

〇Tsutomu Muranaka¹, Tomomu Yamazaki¹, Yohei Sato¹, Kosuke Nakata¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (1.Univ. of Yamanashi)

9:30 AM - 11:30 AM

△ [15a-PA5-10] Epitaxial Growth and Characterization of Various Plane of Single-Phase Metastable Rhombohedral Indium Tin Oxide Thin Films by Using Mist CVD Method.

〇(M1)Kazuki Shimazoe¹, Hiroyuki Nishinaka¹, Daisuke Tahara¹, Yuta Arata¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

9:30 AM - 11:30 AM

[15a-PA5-11] Anneal Effect on PL of ZnO Nanorods Prepared by Electrochemical Deposition

〇(B)Yuki Goto¹, Satoru Suzuki¹ (1.N.I.T. Kisarazu Col.)

9:30 AM - 11:30 AM

[15a-PA5-12] Electron transport mechanisms in amorphous zinc oxysulfide (ZnO_1-xS_x) thin films

〇Masato Tsuchii¹, Chen Zhen¹, Yasushi Hirose¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo)

9:30 AM - 11:30 AM

[15a-PA5-13] Anisotropy of electric characteristics in a-Ga₂O₃

〇Ryo Moriya¹, Shohei Aoyama¹, Junjiroh Kikawa¹, Takashi Shinohe², Isao Takahashi², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.FLOSFIA)

9:30 AM - 11:30 AM

[15a-PA5-14] TEM Observation of Sn-doped m-plane α-Ga₂O₃

〇Hiroiki Hayakawa¹, Junjiroh Kikawa¹, Takashi Shinohe², Isao Takahashi², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.FLOSFIA)

9:30 AM - 11:30 AM

[15a-PA5-15] Mechanical alloying on Ga₂O₃ and Al₂O₃ mixture powders

〇Hiroaki Kishimura¹ (1.NDA)

9:30 AM - 11:30 AM

[15a-PA5-16] Band alignment of rock salt structured Mg_xZn_1-xO

〇Yuichi Ota¹ (1.TIRI)

9:30 AM - 11:30 AM

△ [15a-PA5-17] Self-Trapped Holes in Gallium Oxide Polymorphs from First Principles

〇(M2)Tomoya Gake¹, Yu Kumagai¹, Fumiyasu Oba¹ (1.Tokyo Tech)

9:30 AM - 11:30 AM

[15a-PA5-18] Crystallinity and physical property evaluations of epitaxial NiO thin films prepared by using mist CVD method

〇Akito Igarashi¹, Chinami Hoshino¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

9:30 AM - 11:30 AM

[15a-PA5-19] Epitaxial growth of ε-Ga₂O₃ thin films on β-Ga₂O₃(-201) substrates by mist CVD method

〇Yuki Kajita¹, Hiroyuki Nishinaka¹, Daisuke Tahara¹, Yuta Arata¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

9:30 AM - 11:30 AM

[15a-PA5-20] Fabrication of 4-inch β-Ga₂O₃ Bulk Substrates and Homoepitaxial Films by EFG and HVPE Methods

〇Chiahung Lin¹, Quang Tu Thieu¹, Ravikiran Lingaparthi¹, Thangaraja Amutha¹, Yuki Uchida¹, Fumio Otsuka¹, Kimiyoshi Koshi¹, Shinya Watanabe¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology)

9:30 AM - 11:30 AM

[15a-PA5-21] Inductively coupled plasma sputtering system of oxide semiconductors for large area deposition

〇Shigeaki Kishida¹, Daisuke Matsuo¹, Takuya Ikeda¹, Yoshitaka Setoguchi¹, Yasunori Andoh¹ (1.Nissin Electric)

9:30 AM - 11:30 AM

[15a-PA5-22] Epitaxial growth of NiO thin films by RF reactive magnetron sputtering for the investigation of defect properties

〇Keisuke Nishimoto¹, Joonam Kim^1,2, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci, 2.RIST)

9:30 AM - 11:30 AM

[15a-PA5-23] Nitrogen doping and annealing for ZnO films grown by a catalytic reaction-assisted CV

Taro Saito¹, Ryuta Iba¹, Hiroki Kanbayashi¹, Ariyuki Kato¹, 〇Kanji Yasui¹ (1.Nagaoka Univ. Technol.)

9:30 AM - 11:30 AM

[15a-PA5-24] Mist chemical vapor deposition of flexible and epitaxial wide-bandgap oxide semiconductors on synthetic mica

〇Yuta Arata¹, Hiroyuki Nishinaka¹, Kazuki Shimazoe¹, Daisuke Tahara¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

9:30 AM - 11:30 AM

[15a-PA5-25] ZnO-based nano/micro crystal scanning electron microscope image like image-generation using generative adversarial networks

〇Tetsuya Kouno¹, Kosei Ohashi¹, Kenya Fujiwara¹, Mikihiro Yamamoto¹ (1.Shizuoka Univ.)

Session information

[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [15a-PA5-1] Enhancing power of ZnO nanoparticle LEDs using silica coated silver Nano particles

▲ [15a-PA5-2] p-ZnO/n-ZnO Nanoparticles based UV Light Emitting Diodes

[15a-PA5-3] Influence of wettability of surface modified gate insulator on electrical properties of amorphous In₂O₃thin-film transistors

[15a-PA5-4] Growth partial pressure dependences and heat treatment effects on PLD growth of Al-doped ZnO thin films

[15a-PA5-5] Low temperature top-gate IGZO TFT using SiO:F film by ICP CVD

[15a-PA5-6] Increase of Carrier density and Mobility of Ga:ZnO Films by Zn incorporation

[15a-PA5-7] Post-deposition Process for Improving Electrical Properties of Sol-gel Deposited ZnO

[15a-PA5-8] Fabrication and characterization of In₂O₃transparent conductive films co-sputtered with CaF₂

[15a-PA5-9] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (4)

△ [15a-PA5-10] Epitaxial Growth and Characterization of Various Plane of Single-Phase Metastable Rhombohedral Indium Tin Oxide Thin Films by Using Mist CVD Method.

[15a-PA5-11] Anneal Effect on PL of ZnO Nanorods Prepared by Electrochemical Deposition

[15a-PA5-12] Electron transport mechanisms in amorphous zinc oxysulfide (ZnO_1-xS_x) thin films

[15a-PA5-13] Anisotropy of electric characteristics in a-Ga₂O₃

[15a-PA5-14] TEM Observation of Sn-doped m-plane α-Ga₂O₃

[15a-PA5-15] Mechanical alloying on Ga₂O₃ and Al₂O₃ mixture powders

[15a-PA5-16] Band alignment of rock salt structured Mg_xZn_1-xO

△ [15a-PA5-17] Self-Trapped Holes in Gallium Oxide Polymorphs from First Principles

[15a-PA5-18] Crystallinity and physical property evaluations of epitaxial NiO thin films prepared by using mist CVD method

[15a-PA5-19] Epitaxial growth of ε-Ga₂O₃ thin films on β-Ga₂O₃(-201) substrates by mist CVD method

[15a-PA5-20] Fabrication of 4-inch β-Ga₂O₃ Bulk Substrates and Homoepitaxial Films by EFG and HVPE Methods

[15a-PA5-21] Inductively coupled plasma sputtering system of oxide semiconductors for large area deposition

[15a-PA5-22] Epitaxial growth of NiO thin films by RF reactive magnetron sputtering for the investigation of defect properties

[15a-PA5-23] Nitrogen doping and annealing for ZnO films grown by a catalytic reaction-assisted CV

[15a-PA5-24] Mist chemical vapor deposition of flexible and epitaxial wide-bandgap oxide semiconductors on synthetic mica

[15a-PA5-25] ZnO-based nano/micro crystal scanning electron microscope image like image-generation using generative adversarial networks

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