[14p-A305-1~14] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

▲ [14p-A305-2] The low temperature fabrication of gate-first Schottky barrier pMOSFET with PdErSi source and drain

〇RengieMark Domincel Mailig¹, Yuichiro Aruga¹, Min Gee Kim¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:PdErSi, SB MOSFET, gate-first process

The main requirement for the integration of the high-k gate insulators such as HfN or HfO₂ in the gate-first CMOS fabrication is the low-thermal budget process below 500°C. In this work, the PdErSi as S/D material in the gate-first SB p- channel MOSFET (pMOSFET) was investigated.