[11a-S301-1~7] Atomic layer processes for future device fabrication; Understanding surface reaction dynamics and its control

[11a-S301-5] Process design of atomic layer etching and the control of elementary reactions

〇Kenji Ishikawa¹, Thi-Thuy-Nga Nguyen¹, Takayoshi Tsutsumi¹, Shih-Nan Hsiao¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

Keywords:atomic layer etching

Plasma etching technology can be used for formation of nanoscale features. It is necessary to control satisfactory both physical dimensions and chemical properties of the etched features. Utilimately, this scale is reaching at atomic level. To control the etching process at atomic level, it becomes more important to understand principles in the atomically etching reactions. Considered the complexicity of plasma and surface interactions, we suggest approaches of the hierachiral divisions into (1) gas phase reactions, (2) atom and molecule transport, and (3) surface reactions in the plasma etching reactions and the coordination among theory, computation, and experiments for descovering optical conditions. Fundarmental data from the highly reliable experiments should be filed openly to construct the database for atomically controlled process enegineering.