Fabrication of ultra-low dislocation AlN template with tiny pits multilayer structure

Ryota Hidaka; Ryo Okuno; Taketo Kowaki; Yongzhao Yao; Yukari Ishikawa; Yoshihiro Sugawara; Daisaku Yokoe; Hideki Hirayama; Satoshi Kurai; Narihito Okada; Yoichi Yamada; Kazuyuki Tadatomo

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-N101-1~18] 15.4 III-V-group nitride crystals

Mon. Sep 13, 2021 1:00 PM - 6:00 PM N101 (Oral)

Masataka Imura(NIMS), Tomoyuki Tanikawa(Osaka Univ.), Shuhei Ichikawa(Osaka Univ.)

3:45 PM - 4:00 PM

△ [13p-N101-11] Fabrication of ultra-low dislocation AlN template with tiny pits multilayer structure

〇Ryota Hidaka¹, Ryo Okuno¹, Taketo Kowaki¹, Yongzhao Yao², Yukari Ishikawa², Yoshihiro Sugawara², Daisaku Yokoe², Hideki Hirayama³, Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ, 2.JFCC, 3.RIKEN)

Keywords:crystal growth, AlN, MOVPE