[19p-Z24-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

▲ [19p-Z24-9] Is the Si-O Stretching Mode from Gate Oxide in MOS Structure related to the Density of
Interface States?

〇Mickael Lozach¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.Minimal Fab Promoting Organization, 2.National Institute of Advanced Science and Technology (AIST))

Keywords:Gate oxide, FTIR, Interface States Density

To assess the quality of P-channel metal-oxide-semiconductor field effect transistor (p-MOSFET), also called pMOS, two important parameters are often used: the estimation of the density of interface states between the n-type silicon substrate and the silicon oxide layer, i.e. the gate oxide, and also the quality of the silicon oxide layer itself. The importance to reach the lowest density of interface states (D_it) is already well established for any semiconductor devices. Here, the optical properties of the silicon oxide are also monitored by Fourier Transform Infra-Red (FTIR) and coupled with the gate oxide process, the chemical cleaning process prior to the gate oxide deposition, and D_it measured on pMOS devices. Mainly, this study aims to link the behavior of the in-phase and out-of-phase components of the Si-O stretching mode with D_it measured from C-V measurement using the high frequency and quasi-static frequency method.