Naohisa Inoue

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Speaker, Author, Co-Author

Tue. Sep 20, 2022 1:30 PM - 3:45 PM C202 (C202)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[20p-C202-1~8] 15.7 Crystal characterization, impurities and crystal defects

3:00 PM - 3:15 PM

[20p-C202-6] Quality of silicon substrate and point defects (8) Non-uniformity of lattice parameter in Avogadro crystal

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ.)

3:15 PM - 3:30 PM

[20p-C202-7] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(21) Thermal behavior of VN complexes

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ.)

3:30 PM - 3:45 PM

[20p-C202-8] Measurement of carbon concentration in silicon crystal
(25) 10¹³/cm³ range by low temperature infrared absorption

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Metropolitan Univ.)