Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[20p-C202-1~8] 15.7 Crystal characterization, impurities and crystal defects

Tue. Sep 20, 2022 1:30 PM - 3:45 PM C202 (C202)

Takuto Kojima(Nagoya Univ.), Haruo Sudo(GlobalWafers)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[20p-C202-1] Development of Interatomic Potentials for Binary Metals
applying First-Principles Calculations and Machine Learning

〇Takeru Miyagawa¹, Yugo Sakai¹, Akio Yonezu¹, Kazuki Mori², Nobuhiko Kato², Keiji Ishibashi³ (1.Chuo Univ., 2.CTC, 3.COMET Inc.)

1:45 PM - 2:00 PM

[20p-C202-2] Impact of Interstitial Oxygen on Stability of Nitrogen-Vacancy Complexes in Czochralski Silicon Single Crystals (2)

〇Akira Sada¹, Yusuke Noda², Koji Sueoka², Kaoru Kajiwara³, Masataka Hourai³ (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO Corporation)

2:00 PM - 2:15 PM

[20p-C202-3] Stability of an oxygen atom near a Frank partial dislocation loops in Si crystals

〇Eiji Kamiyama^1,2, Yusuke NODA², Koji SUEOKA² (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)

2:15 PM - 2:30 PM

[20p-C202-4] Evaluation for the Coulomb repulsions through Wannier Functions with Selected Columns of the Density Matrix method

〇Jun Inagaki^1,2 (1.RIXS Sim. Research, 2.Tamkang Univ.)

2:45 PM - 3:00 PM

[20p-C202-5] Hydrogen diffusion behavior of CH₄N-molecular-ion-implanted wafers for 3D stacked CMOS image sensors

〇Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

3:00 PM - 3:15 PM

[20p-C202-6] Quality of silicon substrate and point defects (8) Non-uniformity of lattice parameter in Avogadro crystal

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ.)

3:15 PM - 3:30 PM

[20p-C202-7] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(21) Thermal behavior of VN complexes

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ.)

3:30 PM - 3:45 PM

[20p-C202-8] Measurement of carbon concentration in silicon crystal
(25) 10¹³/cm³ range by low temperature infrared absorption

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Metropolitan Univ.)

Session information